Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
- 2D Single Event Effects
This example demonstrates Single Event gate Rupture (SEGR) in a Power MOSFET
The structure of the 3D Power MOSFET in this example is conveniently cylindrically symmetric allowing the 3D structure to be simulated accurately using only two dimensions with cylindrical co-ordinates. For the simulation of single events, only a central and vertical strike is a valid candidate for correctly simulating 3D effects using this 2-dimensional circular symmetry method. This method is invoked using the cylindrical parameter, on the mesh statement.
After the 2-dimensional Victory Process simulation of the power MOSFET, the structure was imported into Victory Mesh to create a mesh suitable for device simulation.
In the device simulator, the power MOSFET is biased to a condition where the drain voltage is approximately twice the gate voltage, which is known to make such a device more susceptible to gate rupture after a single event.
A single event, with an LET value of 37.2 MeV-cm2/mg corresponding to a bromine ion, was allowed to strike the power MOSFET and the evolution of the gate oxide electric field was monitored using the probe statement. It is observed that the gate oxide electric field suffered a 3-fold increase, just after the strike, taking it close to the bulk dielectric breakdown field strength and therefore vulnerable to an irreversible di- electric breakdown event. The gate oxide Fowler Nordheim current was also monitored and exceeded one tenth of a nano Amp.
Images
