Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device
- 2D Simulator
- 2D Giga
- 2D Single Event Effects
This example demonstrates Single Event Burnout (SEB) in a High Voltage PiN Diode. The structure of the 3D PiN diode is simple enough to be emulated directly in the device simulator without the need to resort to a full process simulator.
Further simplification is afforded by the circular symmetry of the diode allowing the diode to be simulated in two dimensions with cylindrical corrections to correctly predict 3D device characteristics. For the simulation of single events, only a central and vertical strike is a valid candidate for correctly simulating 3D effects using this 2-dimensional circular symmetry method. This method is invoked using the cylindrical parameter, on the mesh statement.
There are two important requirements for simulating Single Event Burnout (SEB).
Firstly, the device IV characteristics must display a “snapback ” characteristic, where, for at least a range of voltages, there exists two possible corresponding stable current conditions, one a low current “off ” state and a second high current “on ” state. At high voltages, the “on ” state*dissipates sufficient power to overheat the device.
Secondly, self-heating plays a leading role in greatly reducing the current density in a PiN diode at which the snapback IV characteristic occurs, allowing a significantly lower Linear Energy Transfer (LET) strike to transfer the diode from an “off ” state, to a stable “on ” state, where continuous heating eventually burns the device to destruction, hence the name of the phenomenon, “Single Event Burnout “.
This example first biases the PiN diode close to its breakdown voltage of 3,500 volts. Then a LOOP, L.END statement is used to start the simulation with a strike of 4 MeV-cm2/mg LET. The LOOP then doubles the LET strike value until the current pulse from the strike is sufficient to transfer the IV characteristics to a stable “on ” state, whereupon the device burns out in short order afterwards.
Images
