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Silicon_Power_ex16.in : 500V LDMOS Process and Device Simulation

Silicon_Power_ex16.in : 500V LDMOS Process and Device Simulation

Silicon_Power_ex16.in : 500V LDMOS Process and Device Simulation

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

This example demonstrates a 500V LDMOS Device with the field plate structure, which is based on the following publication:

Wijaya A C , Sheu G , Deshmane P ,et al. “Simulation methodology to investigate charge redistribution at interface of passivation layer between Silicon Nitride and Silicon Dioxide on UHV LDMOS under HTRB test “, International Conference on Applied System Innovation 2018, DOI: 10.1109/ICASI.2018.8394354

In the process part, various process modules are integrated into a single flow. In the device part, breakdown characterization and parameter extraction are included.

Images

Silicon_Power_ex16_02.png
Silicon_Power_ex16_01.png

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