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Silicon_Power_ex15.in : Relating Platinum Diffusion to Minority Carrier Lifetime Control

Silicon_Power_ex15.in : Relating Platinum Diffusion to Minority Carrier Lifetime Control

Silicon_Power_ex15.in : Relating Platinum Diffusion to Minority Carrier Lifetime Control

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation

Victory Mesh:

  • 2D Meshing

Victory Device:

  • 2D Simulator

This example demonstates how to take the platinum profile from process simulation and use it as the lifetime profile in device simulation.

In the first portion of the simulation (Victory process), a simple PIN diode is created, and platinum is diffused into PIN from the back of the diode. In the second part of the simulation, Victory Device is used to simulate the process in which the bias applied on diode changes from forward to reverse, and a transient analysis is used to track the current change over time.

In the device simulation, platinum acts as traps. The distribution of platinum from process simulation is converted to trap distribution through trap statement together with Victory Device C-interpreter function. Within the F.DENSITY C-interpreter file, CIgetStructureDouble is used to read the active platinum concentration from the process structure.

This example is based on the Simulation Standard article, “Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation ” volume 32, numbr 2, February, 2022. Available at www.silvaco.com

Images

Silicon_Power_ex15__01.png

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