Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 3D Structure Editor
Victory Mesh
- 3D Meshing
Victory Device
- 3D Simulator
- 3D Giga
- 3D MixedMode
When an IGBT is turned on in the presence of a short-circuit in an output circuit for a period of time, it can dissipate power in the form of heat to such an extent that current filaments evolve in a localized area within the IGBT device. The heating effects of current filaments are destructive and thus should not be allowed to arise during a short-circuit operation of an IGBT.
In this example, the 3D MixedMode short-circuit simulation is performed on an IGBT composed of 8 cells to demonstrate the occurrence of current filaments in multicell IGBT.
The 8-cell IGBT structure is constructed in cell mode of Victory Process by joining 8 duplicates of the IGBT single cell together using the MIRROR statement of Victory Mesh. The cell pitch between each IGBT single cell is 20 um and features a 1.3 kV trench-gate design with a field-stop layer (n-buffer).
Short-circuit testing is conducted with a test circuit consisting of a 650-V DC power supply “dc ” in series with a 10-mohm resistor “rs ” and a 10-nH inductor “ls “. A gate pulse generator “vg ” in series with a 10-ohm resistor “rg ” generates a 15-V pulse in 10-ns with a pulse length of 10 us.
Victory Device utilizes a set of physical models for the non-isothermal ( LAT.TEMP: self-heating ) simulation including KLASSEN low-field doping-dependent mobility , FLDMOB lateral electric field-dependent mobility, SRH Shockley-Read-Hall recombination, HNSAUG temperature and concentration dependence Auger recombination, and SELBERHERR impact ionization. The PAS MPI-based parallel direct solver specified in the Victory Device part of the MixedMode input deck ( METHOD DEVICE=ADEVICE PAS ) proves to greatly enhance Victor Device performance in terms of speed and robustness. It is assumed that the bottom collector electrode of the IGBT is maintained at an ambient temperature of 300 K via a thermal contact with a thermal resistance of 0.3 cm2.K/W ( THERMCONTACT NAME=collector EXT.TEMP=300 ALPHA=1/0.3 ).
The MixedMode simulation starts from ramping the DC power supply “dc ” to 650 V and then performs a transient simulation with the gate pulse.
The simulation results give the short-circuit waveforms up to destruction of the IGBT by a sharp rising of temperature to the compliance value of 2300 K in conjunction with the establishment of current filaments. A 3D total current density distribution at that device destruction time is also displayed in Victory Visual.
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