Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
This example demonstrates modeling of Low-Voltage Power MOSFET based on the following reference:
K.Shenai, C.Cavallaro, S.Musumeci, R. Pagano, and A.Raciti, “Modeling Low-Voltage Power MOSFETs as Synchronous rectifiers in Buck Converter Applications, ” Industry Applications Conference, 2003. 38th IAS Annual Meeting pp. 1794- 1801 vol.3.
It shows:
-Structure definition using Victory Process
-Remeshing using Victory Mesh
-Transfer, output, breakdown voltage and body diode characteristics using Victory Device
-AC small signal characteristics using Victory Device
The input deck starts with the definition of the process flow for a low voltage MOSFET transistor in Victory Process. Often a mesh that is used for process simulation, is not optimal for use with device simulation. In this example, the mesh generation tool Victory Mesh is used to optimize the mesh.
In Victory Device, the transfer characteristic is simulated by setting the drain voltage to 25V and ramping the gate voltage to 4V. The threshold voltage is adjusted using the WORKFUNCTION parameter from the contact statement. The output characteristic is obtained by ramping the gate voltage to the desired value and then ramping the drain voltage from 0V to 5V. The LOG OFF statement allows us to save multiple log files for each gate bias.
In order to simulate the breakdown voltage, the initial Victory Process structure has been modified by providing the body region with a contact, thus, ensuring a short with the source region. This is done directly in Victory Device by adding a body contact using the ELECTRODE NAME=BODY statement. To simulate the breakdown curve, the drain voltage is ramped until the current reaches a specified compliance value.
SOLVE vstep=1 vfinal=30 name=drain cname=drain compliance=1
The body-drain diode behavior has also been simulated. The forward characteristic is dependent on the drain and source contact resistance as well as the epi-layer resistance. A drain contact resistance is added using the statement CONTACT NAME=DRAIN RESISTANCE=5e3.
The capacitances are collected by applying a bias ramp on the drain electrode up to 15V. The parameter AC.ANALYSIS on the SOLVE statement turn the AC analysis on. The frequency of this signal is set to 1 MHz.
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