Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
This example compares MOS breakdown simulation using classical impact ionisation method versus ionization integral method.
Ionization integrals are based solely on the electric field strength. Although impact ionization is not solved directly, the impact model is used in the postprocessing analysis. For this it is necessary to specify impact selb.
The ionization integrals are calculated along electric field lines. Electric field lines are specified during the solution by parameters on the solve statement. The parameter deltav specifies an offset between the applied voltage and the voltage at which the electric field lines will start. The lines should not start exactly at a contact since the electric field is often zero at the contact. The locations of the electric field lines can be saved into the solution files. However the output statement must be used to specify the electric field line parameters as in the solve statement. The final plot shows the electric field and the electric field lines at the breakdown point for both the classical and ionization methods.
The solve sequence ramps the drain voltage until the ionization integrals exceed one. Users should note that using this method to extract the breakdown voltage is only approximate. The algorithm does not consider any current and hence usually overestimates the actual breakdown voltage. The advantage over the classical method is speed.
Images
