Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Device
- 2D Simulator
Guard ring breakdown voltage (BV) simulation with floating field plates comparing current boundary and lumped element methods.
This example demonstrates:
-Guard ring process simulation using Victory Process
-Two different methods to “float ” the guard rings during a breakdown analysis using Victory Device
-Breakdown test definition
The breakdown structure considered here consists of a series of four guard rings sandwiched between cathode and anode electrodes. The Victory Process simulation begins by defining a phosphorous doped silicon substrate and its associated mesh. Silicon dioxide is then deposited and etched to expose silicon for guard ring and anode implantation. Boron is implanted and diffused to define the guard ring and anode junction depth. Boron doped polysilicon is then deposited and etched to form the guard ring plate electrodes. Aluminium is deposited and etched to create the anode and cathode electrodes. These electrodes are specified using the electrode statement. This includes the name and position. Notice that a substrate electrode is added by specifying the backside option. The completed structure is saved.
For this breakdown simulation including guard rings, the guard ring contact must be allowed to float. In this case, two different methods to “float ” the guard rings are demonstrated, using large lumped resistances and current boundary, which exhibit identical electrical behaviour. The CONTACT statement specifies that a 1E20 ohm.um series resistor be added to each contact. Alternatively, as demonstrated, current boundary conditions can be used. This allows each guard ring contact to float. Since breakdown in semiconductor devices can occur in the presence of impact ionization, this model should be enabled. In this case, the IMPACT statement enables the Selberherr impact ionization model.
Images
