Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device
- 2D Simulator
This example demonstrates the simulation of reverse I-V and breakdown curves of two types of SiC devices: – 4H-SiC Schottky barrier diode (SBD), and – 4H-SiC junction barrier Schottky diode (JBS), using an SiC-specific anisotropic impact ionization model.
Reference (with Experimental Data):
[1] L. Di Benedetto, G.D. Licciardo, T. Erlbacher, A. Bauer, and S. Bellone, “Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes, ” IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2474-2481, June 2016.
Experimental data from [1] (Fig. 9) are provided with the example and plotted together with the TCAD simulation results, showing a very good agreement with the measured reverse I-V and breakdown curves.
The simulation is run with 80-bit precision by setting the SIMFLAGS= “-80 ” option on the GO statements.
The structure files of each device, SBD and JBS, in equilibrium and in breakdown are stored and can be viewed in Victory Visual. You can view internal physical variables inside the devices, such as electric field, impact generation rates, current density distribution, etc.
Images
