Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
- 3D Structure Editor
Victory Mesh
- 3D Meshing
Victory Device
- 3D Simulator
This example demonstrates the effect of the shape of a trench on IV and BV characteristics.
The 3D layout-driven structure is created by using Victory Process. 3D device simulation is done using Victory Device’s built-in extended precision numeric.
In this example we compare 3 different structures. One fully Manhattan (i.e. right angle layout and trench) versus 2 structures one with a rounded layout and another with a rounded layout and angled trench.
Aluminium implantation is simulated in 1D (to save simulation time) using Monte Carlo implantation before being imported into the 3D structure using the PROFILE statement in Victory Process.
The 3D structure is meshed to a full 3D Delaunay mesh using Victory Mesh. Various options are available in order to optimize the mesh under the gate and at the p/n junction. This 3D refinement is fully automated.
The 3D structure is then loaded into Victory Device. The default 3D Delaunay discretization method combined with a parallelized iterative solver set by PAM.GMRES on the METHOD statement in Victory Device allows for good convergence, speed and accurate results.
Victory Device automatically sets the optical axis downward toward the SiC surface. This is important for anisotropic models such as ANISOTROPIC impact ionization, which treat one direction (downward, in this case along the optical axis in this case) differently than the others.
We can clearly see the effect of the trench shape on the Id-Vg and BV characteristics. In fact, a well-known “hump ” effect is observed on the Id-Vg characteristic, especially on the device with full Manhattan shape. However, this parasitic effect is eliminated in the device with rounded layout and angled trench.
The BV simulation shows that the breakdown voltage can be increased by 30% with a rounded layout and an angled trench because the impact ionization no longer occurs only at the corner of the trench.
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