Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process:
- 2D Diffusion & Implantation
Victory Mesh:
- 2D Meshing
Victory Device:
- 2D Simulator
This example demonstrates a novel edge termination technique for SiC devices known as Hybrid Junction Termination Extension (HJTE), which is introduced in the following publication:
W. Sung, and B. J. Baliga, “A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension, ” IEEE Electron Device Lett., vol. 37, no. 12, pp. 1609-1612, Dec. 2016.
Hybrid JTE combines MFZ and RA JTE structures in a single edge termination device, enabling near ideal breakdown voltage over a wide range of JTE doses.
You can view internal physical variables inside the devices such as electric field, impact generation rates, current density distribution, etc. in Victory Visual. The data files showing doping profiles, I-V characteristics, etc. are also stored and can be visualized.
The example shows:
1. Process simulation of the SiC edge termination device, including:
a. Layout to drive the Guard rings – spacing and doping profiles are as per the publication.
b. Process simulation of the complete SiC edge termination structure using Victory Process.
2. Remeshing of the structure using Delaunay REMESH strategy in Victory Mesh.
3. Simulation of breakdown characteristics using Victory Device.
To optimize the simulation run time, the implant profiles are first created in the 1D simulation mode using the Monte Carlo implantation model. The trajectory splitting function (TRAJ.SPLIT) helps to obtain smooth aluminium profiles. These 1D profiles are later imported into the main 2D structure using the PROFILE statements.
Since the device is made of WBG material (SiC), the simulation is run with 128-bit precision (recommended) by setting the option
GO victorydevice simflags= “-128 “.
During a bias sweep, the surface potential at each p-type ring position can be output to the .log file using PROBE statements, which is useful for guard ring design.
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