Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

• 2D Diffusion & Implantation

Victory Mesh

• 2D Meshing

Victory Device

• 2D Simulator

This example demonstrates a frequency domain AC analysis and S-parameters calculation with the pseudomorphic HEMT structure provided in the previous example (see that text for details on the structure).

Once the structure is loaded into Victory Device, the drain bias voltage is swept to +2V with Vg=0V, which means a quiescent bias point is Vdq=+2V and Vgq=0V. Then, a full frequency domain AC simulation is performed, in which the Y parameter matrix (conductances and capacitances) are calculated as functions of frequency from 10 kHz up to 300 GHz. These results are stored in a log file. Additionally, with the specification of S.PARAM and GAINS on the LOG statement, the S-parameters and the several types of gain are stored to the file.
-Current gain (H21)
-Unilateral power gain (GU/U)
-Maximum transducer power gain (GTmax)
-Maximum available power gain (Gma/MAG)
-Maximum stable power gain (Gms/MSG)
-Stability factor (K)

The results are displayed using Victory Visual.
-H21 and MAG versus frequency
-S-parameters: S11 and S22 on a polar chart
-S-parameters: S12 and S21 on a Smith chart

Images