Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- Core Simulator
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
This example demonstrates a T-gate normally-off p-GaN HEMT structure with a T-gate architecture including a field-plate design. The project models a complete fabrication sequence using Victory Process, enabling accurate representation of the gate stack, field-plate formation, and full device geometry relevant to commercial normally-off power GaN applications.
Device electrical behavior is then analyzed in Victory Device, featuring steady-state DC simulations to extract key performance characteristics:
•Transfer characteristics (ID–VG), showing normally-off operation and threshold-voltage control
•Breakdown performance for assessing off-state blocking capability and field-plate impact
•C–V analysis to evaluate charge control and depletion behavior under gate bias
This example highlights the workflow from process to device simulation and shows how structural features such as the T-gate and field-plate influence performance metrics including threshold voltage, breakdown voltage, and gate control efficiency.
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