Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Mesh
- 2D Remeshinig
Victory Device
- 2D Simulator
- 2D MixedMode
Structure based on the following paper: K. Sehra et al, “A Π-shaped p-GaN HEMT for reliable enhancement mode operation “, Microelectronics Reliability, Volume 133, 2022, 114544, https://doi.org/10.1016/j.microrel.2022.114544
RDSon calculated based on methodology presented in following paper: Ronchi, N., Bakeroot, B., You, S., Hu, J., Stoffels, S., Wu, T.-.-L., De Jaeger, B. and Decoutere, S. (2017), Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs. Phys. Status Solidi A, 214: 1600601. https://doi.org/10.1002/pssa.201600601
The example demonstrates building a Pi-Gate P-GaN HEMT device using Victory Process and Victory Mesh.
The example also demonstrates how to perform RDSon simulation using TCAD for a p-GaN HEMT. It is seen that with repeated pulsed operation of the GaN HEMT, the drain current reduces, revealing an increase in the RDSon as the traps fill with a 10% duty cycle.
– Process Simulation:
complete process flow with in-deck mask creation for Pi gate structure.
– Device Simulation:
Pulsed Transient simulation for RDSon modelling.
Images
