Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator
• 3D Simulator
• 2D Giga
• 3D Giga

This example demonstrates Id-Vds and Id-Vgs simulations for a 2D and 3D AlGaN/GaN HEMT.

This example demonstrates:

Construction of the heterojunction structure using Victory Device syntax

Material and models parameter specification

Simulation of Id/Vds and Id/Vgs characteristics

Display of the results

The device under consideration is a AlGaN/GaN HEMT. The main concept here is that the polarization charge is calculated using the built-in models as specified by the POLARIZATION parameter on the MODEL statement.

After the initial solution is obtained, the gate voltage is ramped from 0V to -7.6 V to get the IdVg characteristic at Vd=1 V.

A family of drain current characteristics are then simulated with lattice heating taken into account by ramping the drain from 0 to 15 V at various gate voltages.

Since the width of the 3D device is set to 1um a direct comparison with 2D results is possible for validation purpose.

Images