Home> >

mem_ex01.in : eFlash Device based on the Flow of 55nm CMOS Examples for Programming and Erasing Simulation

mem_ex01.in : eFlash Device based on the Flow of 55nm CMOS Examples for Programming and Erasing Simulation

mem_ex01.in : eFlash Device based on the Flow of 55nm CMOS Examples for Programming and Erasing Simulation

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

This example demonstrates the full process flow, including device simulation, of a dual-gate eFlash structure.The example flow is based on the process flow of 55nm CMOS Exmaples for Programming and Erasing Simulation. Various proccess steps are integrated into a single flow with a calibration file for accurate simulation. In device simulation, Vth is found before/after programming and after erasing the memory. Transient simulation is also completed before and after programming

Images

mem_ex01_02.png
mem_ex01_01.png

Related Articles