Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process:
- 3D Structure Editor
Victory Mesh:
- 3D Meshing
Victory Device:
- 3D Simulator
- 3D TFT
This example is to demonstrate the evolution of IdVg characteristics of an p-type PolySi TFT dependent on transient PBTS (Positive Bias Temperature) and NBTS (Negative Bias Temperature) conditions.
The simulation consists of four parts:
1) Structure Generation:
The 3D top dual-gate PolySi TFT was constructed in Victory Process (VP).
The SPECIFYMASKPOLY statement was used to draw geometry of each layer, then each layer was used in the process procedure. The DEPOSIT, ETCH, IMPLANT, MASK and DIFFUSE statements were used to construct the 3D TFTs. The SAVE statement was to generate a VP structure.
2) Remeshing:
Loading and remeshing the VP structure in Victory Mesh (VM) by conformal mesh.
3) DC Simulation:
Defining variable Density of States (DOS) for PolySi by DEFECTS statement and other material parameters can tune IdVg transfer characteristics of TFTs. Physics models was assigned as a variable, so that we can use those in the following stress conditions.
4) Transient PBTS and NBTS simulation:
Empirical stress model was used by the statement DEGRADATION ESM.PBTI and ESM.NBTI for PBTS and NBTS conditions, respectively. Solving different transient time solution can be used for loading in post stress DC simulation. The METHOD dt.max=* dt.min=* statement need to specify for different transient sweeping for fast and better convergence purposes.
5) DC simulation after transient PBTS and NBTS conditions:
Using LOOP statement to load the previous different transient PBTS or NBTS solution, then DC simulation was done with the same physical model set. It’s noted that right and left Vth shift in IdVg curves which are consistent for the trend of measurements.
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