Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device:
- 2D Simulator
- 2D TFT
This file performs IdVg transfer and IdVd output curve simulation of a polysilicon TFT device with material properties corresponding to grains and grain boundaries. The simulation results are compared with reference data. This example shows how to calibrate the defect of grains and grain boundaries using a user-defined C-interpreter function.
The example shows:
– Structure formation including grain boundary and grain interior regions.
– Material and model settings for polysilicon TFT
– Id/Vg transfer characteristics
– Id/Vd output characteristics
The key command in the polysilicon TFT simulation is the defects and intdefects statements. They are used to define a continuous density of trap states in the polysilicon grain interior and grain boundaries.
The C-interpreter function is used to define user-defined grain and grain boundary defect states. option cint.param=* cint.double=* defines the global parameter used in the C-function and is passed into the C-function input file from the deck.
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