Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device:
- 2D Simulator
- 2D TFT
The hysteresis effect is caused by different reaction time scale between forward and reverse sweep. This is related to different reaction time scale between trapping and de-trapping process. In IGZO TFT case, the hysteresis simulation can be shown by several method. One of easiest way is to use Heiman interface trapping model. Or we can use chemical ion reaction model, which was introduced in previous TFT example to explain the oxygen vacancy ionization and recovery process. In this example, we used direct transient simulation with adjusting capture cross section. In steady state (DC) simulation, it always show small current than transient mode simulation current. It means that in DC case, there is enough time to trap carrier but in transient mode it depends on how ramping speed is performed to measure IV curve given capture cross section. In this simulation, we chose somewhat small capture cross section (SIGTAE) to enlarge the effect of hysteresis.
The deck file is launch file to split various ramping time to get the different hysteresis effect.
Images
