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LED_OLED_ex09.in : Charge generation layer(CGL) simulation for tandem OLED

LED_OLED_ex09.in : Charge generation layer(CGL) simulation for tandem OLED

LED_OLED_ex09.in : Charge generation layer(CGL) simulation for tandem OLED

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Required Modules

Victory Device

  • 2D Simulator
  • 2D Organic

In this example we demonstrated how to simulate charge generation layer (CGL) for tandem OLED. We simulate the charge generation at the interface between transition metal oxide interconnector layer and hole transport layer using Danielsson interface recombination model. The electron carrier is generated at the MoO3/NPB interface and transported to Alq3(ETL) layer. Hole carriers is only shown in HTL from the interface. Inserting MoO3 interlayer significantly modifies the interfacial property. The Danielsson model is only applied to MoO3/NPB interface and effective barrier height is adjusted at Alq3 and MoO3 interface. This assumption is well described in many researchers to describe the charge generation at the interface between MoO3 and NPB layer. For transporting generated electron carrier from the interface, we adjusted electron barrier height between Alq3 and MoO3 layer using QN.BARRIER parameter. With these assumptions, we can successfully reproduce experimental injection curve shown in reference [1].

[1] Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer, Lu Feiping et al., Journal of Semiconductors, Vol. 35, No. 4, April 2014.

Images

LED_OLED_ex09_01.png

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