Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Implantation & Diffusion
- 2D Oxidation
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
This example uses process simulation to construct a SOI MOSFET that has full dielectric isolation. Device simulations are then performed that use Non-isothermal Energy Balance (NEB) calculations to obtain Ids/Vds characteristics. It shows:
SOI structure formation using Victory Process simulation
Partially depleted SOI design
Selection of energy balance and lattice heating models in Victory Device
Selection of numerical methods for coupled solution technique
Id/Vds simulation for Vgs=1.0, 3.0 and 5.0 V
A silicon-oxide-silicon structure was formed by Victory process. This structure was then subjected to a standard bulk MOSFET processing sequence, The structure in this example has been designed so that the SOI thickness is greater than the depth of the source and drain junctions. This ensures that the device will operate in a partially depleted mode of operation during later device simulations.
One major modification made to the original processing sequence was to introduce a LOCOS isolation step. The result of this step was the creation of a fully oxide isolated island of silicon. The Viscous model for oxidation has been used in this example to study birds beak effects in SOI MOSFETs, as described in Victory Process section.
The process simulation structure will be passed into Victory Device automatically using DeckBuild’s auto-interface. This auto-interface therefore allows global optimization from process simulation to device simulation to SPICE model parameter extraction.
The contact statement is used in Victory Device to define the workfunction of the gate electrode. The interface command is used to define the fixed charge at the oxide/silicon interfaces. The models statement defines a set of physical models for the simulation. CVT and SRH are standard models for MOSFET simulation. The energy balance equation for electrons is specified by hcte.el parameter and the lattice heat flow equation is solved with Giga by setting the parameter lat.temp . A thermal contact must also be defined when solving the heat flow equation with Giga and is defined using the thermcontact statement. In this example this thermal electrode is defined to be the same as the substrate electrode.
The numerical algorithm chosen for this system of equations is the newton approach defined on the method statement. This statement is also used to define the semiconductor equations.
The gate voltage is ramped to 1, 3 and 5 V and a solution saved at each of these bias conditions. Each solution is then used as the initial starting point for simulating the Ids/Vds characteristics by using the load command. A logfile is then opened to store the terminal characteristics and a solve statement applies the drain bias sweep. This procedure is then repeated for each gate voltage.
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