Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Implantation & Diffusion
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
This example demonstrates RF power gain calculation for a 180nm PD-SOI NMOSFET.
First, Victory Process tool is used to build the device structure. The simulated PD-SOI process and devices are described in more detail in the previous SOI14.in example.
2D Device Simulations
A number of different RF device characteristics are simulated using Victory Device
The input deck includes the:
Specification of materials, models, and simulation parameters
Large-signal transient simulation of RF waveforms with varying amplitudes
Large-signal transient simulation of a RF waveform with constant amplitude at different DC operating biases
Calculation of input power, output power and power gain for the fundamental frequency and the first four harmonic frequencies
Display of the results in Victory visual
First, a 50 Ohm load resistor is added to the drain electrode using the {CONTACT} statement. A series of large-signal transient simulations with different amplitudes is then performed with vdrain=2V. An input waveform of 1GHz is applied to the gate electrode and a single period is simulated in the time domain. This simulation is repeated with different values of sinusoidal amplitude of the gate. The resulting transient data is then converted to the frequency domain using the FOURIER statement. The FOURIER statement is used to calculate the input power, output power and power gains for the fundamental frequency as well as the first 4 harmonic frequencies. The results are then plotted using Victory visual .
Finally, a series of large-signal transient simulations with constant amplitude, but varying DC offset is performed. An input waveform of 1GHz is applied to the gate electrode with a fixed amplitude of 0.2V. The single period time domain simulation is repeated for varying values of drain voltage and the resulting transient data is then converted to the frequency domain. The output power as a function of drain voltage is plotting for the fundamental and first 4 harmonic frequencies.
Images
