SOI_ex03.in : The "Kink" Effect in Partially Depleted SOI MOSFETs

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SOI_ex03.in : The “Kink” Effect in Partially Depleted SOI MOSFETs

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

2D Simulator

This example simulates the Ids/Vds characteristics of a partially depleted SOI MOSFET, for three gate voltages. The effect of impact ionisation at the drain junction causes the silicon film to be raised in potential and causes a shift in the threshold voltage. This is seen as a “kink ” in the Ids/Vgs curves. The file shows:

Basic SOI structure definition using Victory Device syntax

Setting transport models including impact ionization

Generating an Ids/Vds curve with Vgs=1V, 2V and 3V

Plotting output curves and structures.