Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Mesh
- 3D Meshing
Victory Device
- 3D Simulator
In this example we show how to use the Victory Mesh solid modelling engine to quickly and efficiently build a FinFET structure simulating epitaxial SiGe source-drain growth. The primary focus is speed and shape manipulation. The solid modelling approach gives great flexibility for complex shape generation (the SiGe stressors). This approach allows fast shape prototype investigation before moving to the stress and physical investigations.
The example begins by defining a number of shapes to use for the SiGe and silicon features. These shapes use a macro called bezier.fin.macro and angle.fin.macro . The Victory Mesh macro support allows several commands to be grouped together in a single command call. See the Victory Mesh manual for further details on macro creation. The angle.fin.macro generates a 2-dimensional profile of a fin which is then extruded into 3-dimensions. The bezier.fin.macro generates a fin using the path and follow commands which allow a bezier profile to be translated along a path generating a surface mesh of a solid shape. The layers command is then used to generate the primary planar structure. The splice and combine commands are used to insert the bezier fins into the layered structure. A macro called insert.macro inserts the cuboid and angle fin shapes via the slice to define the FinFET inner features.
A Delaunay remeshing with interface refinement completes the device mesh generation. The example also uses Victory Mesh line statements, to create a conformal mesh, in a similar way to Victory Process and Victory Device. Results of device simulations using Delaunay or conformal mesh are compared. The electrode and field commands are used to add electrodes and doping respectively. The field command can add constant or Gaussian doping dependent on the constant or gaussian flags.
An exploded view of the device is also shown in this example. The explode command will move each region along a vector from the centroid of the structure to the centroid of the region. The command takes a scale parameter to define the scale of this vector. A value of zero represents the original structure. The regions and regions.scalars parameters are optional but can be used to define specific scaling for a given list of regions. This is useful in this example to move the SiGe regions slightly further than the source-drain aluminium contacts. The device simulation calculates the un-saturated IdVg curve.
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