Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

This simulation demonstrates the effects or remote coulomb scattering on the effective mobility in high-k gate dielectric MISFET devices.

The goal of this simulation is to reproduce the data in figure 2 of the reference [2].

Basic structure is defined by using Victory Device syntax.

High-k remote Coulomb scattering mobility model is applied.

Probe statement allows to extract effective mobility versus perpendicular field.

Output curves and structures are finally plotted.

This is based on the work of:

[1] Tanimoto, H. et.al., “Modeling of Electron Mobility Degradation for HfSiON MISFETs “, Proc. of SISPAD (2006), pp. 47-50.
[2] Zhu, W. and Ma, T., “Temperature Dependence of CHannel Mobility in HfO2-Gated NMOSFETs “, IEEE Elec. Dev. Lett., Vol. 25, No. 2, pp. 89-91, 2 Feb. 2004.

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