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Bulk_ex04.in : Full characterisation of a MOS (Part 1)

Bulk_ex04.in : Full characterisation of a MOS (Part 1)

Bulk_ex04.in : Full characterisation of a MOS (Part 1)

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation
  • 2D Oxidation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

This example shows how to simulate the full characterisation of a MOS.

Structure Creation:

-Process simulation of a MOS transistor in Victory Process

-Process parameter extraction (e.g., oxide thicknesses)

-Mirroring and remeshing in Victory Mesh

Electrical Simulation:

-Id/Vgs and Threshold Voltage Extraction

-Family of Id/Vds Curves

-Sub-Threshold Slope Extraction

Images

Bulk_ex04_01.png
Bulk_ex04_02.png
Bulk_ex04_04.png
Bulk_ex04_03.png

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