Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device
- 2D Simulator
- 2D Giga
This example shows:
How to create a simple cryo-MOSFET structure.
How to activate the ALMA thermal conductivity model.
How to run a Cryogenic simulation with Lattice heating included.
Typical Victory Device meshing commands are used to set up a MOSFET-like structure.
The simulator is set-up to use the 160-bit precision version of Victory Device. The TCON.ALMA flag is enabled on the MATERIAL statement for silicon in order to use the ALMA simulated thermal conductivity which is valid for low temperatures.
The THERMCONTACT statements set the outside boundary of the source and drain to be fixed at 10 K, the initial device temperature. To fix the whole of the source and drain to 10K, you can explicitly clear the flag BOUNDARY, if you wish.
The lattice heating is enabled by LAT.TEMP on the MODELS statement, where the HEAT.FULL heating model is also set.
A gate bias of 3V is applied, under conditions of no current flow. This puts the channel into inversion. The drain bias is then ramped to 3V and the device heats up. The dependence of temperature on bias, and the distribution of Temperature at Vg=3V, Vd=3V are plotted.
Images
