Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

This example shows formation of an NPN BJT using Victory Device syntax.

The example then goes onto undertake a full electrical analysis of the structure:

– Gummel Plot
– Ic/Vce Characterization
– BVCEO Breakdown Voltage

The initial stage of the example uses the mesh, region, and electrode statements in Victory Device to construct the NPN structure. Analytical doping profiles are added in the doping statement. The structure has a heavy n+ emitter, 1.0e18 peak base concentration, a buried collector layer and heavy p+ extrinsic base contact.

The contact statement is used to define the emitter contact as a N-type polysilicon emitter. Surface recombination is also specified at the polysilicon/ silicon interface. Next, the material statement is used to specify the electron and hole SRH lifetimes.

The simulation then proceeds to undertake different electrical characterisation schemes on the structure.

Images