Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

This example demonstrates simulation of a Schottky Diode Forward Characteristic. It shows:

Formation of a diode structure using Victory Device syntax

Setting of Schottky barrier height for the anode

Forward biasing the anode

In the first part of the input file the device is described, including mesh, electrode locations, and doping distribution. This is a 2D n-type device with heavily doped floating p-type guard ring regions, located at the left and right sides of the structure. The Schottky anode is located at the top of the device, and a heavily doped cathode is located at the bottom of the device.

After the device description, the model statement is used to specify the following set of models: carrier concentration dependent mobility (ccsmob), field dependent mobility, band-gap narrowing, SRH and Auger recombination.

The key statement for setting a Schottky contact is contact name= work=. It is used to specify the workfunction of the Schottky electrode. In this example, since the substrate is n-type silicon with an affinity of 4.17, the specified workfunction of 4.97 provides a Schottky-barrier height of 0.8V. The default barrier height is zero (a perfect ohmic contact). This condition is assumed for the cathode.
The electrical simulation simply ramps the anode voltage to 1.0V in 0.05V steps using the solve statement. The results of the simulation are then displayed.

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