Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 3D Diffusion & Implantation
- 3D Stress
Victory Mesh
- 3D Meshing
Victory Device
- 3D Simulator
This example is for a 4nm FinFET simulation and includes complete simulation flow from process to device modeling. In the process part, various process modules are integrated into a single flow. In the device part, transfer characterization and parameters extraction are included.
Structure Creation:
Process simulation flow of a 4nm FinFET structure, various process modules are integrated into this flow.
Process parameter extraction
Mirroring structure at the end of Process simulation
Remeshing in Victory Mesh
Electrical Simulation:
Transfer characterization:
-IdVglin and IdVgsat Simulation
Parameter extraction: Vtgm/Vtlin/Idlin/Vtsat/Idsat/Idoff/SSsat/DIBL Extraction
Reference paper:
Sell B, An S, Armstrong J, et al. “Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing. ” 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
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