Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

Carrier injection into the gate oxide can lead to hot carrier degradation effects such as threshold voltage changes due to occupied traps in the oxide. Hot carriers can also generate traps at the silicon-oxide interface known as fast surface states leading to subthrehold swing deterioration and stress-induced drain leakage. The energy of the hot carriers depends mainly on the electric field in the pinch-off region. Since the scaling of supply voltage has not been as aggressive as the device geometry scaling, the electric field has been permanently rising. All local electric field-based models will normally overestimate the rate of impact ionizzation. In real devices, the electric field is never constant but is normally sharply peaked at metallurgical junctions. The effect of this is that simulated breakdown voltages will be underestimated and substrate currents overestimated.

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