Victory Mesh Generation, Remeshing, and Solid Modeling

Victory Mesh provides users with power functionality to mesh and refine existing 2D and 3D TCAD structures, as well as solid modeling capabilities to generate new 2D and 3D structures. A typical use-case involves raw geometrical and doping data from Victory Process as input to produce a refined mesh that is suitable for device simulation in Victory Device or 3D parasitic extraction in Victory RCx Pro. Alternatively, the geometry of an existing device can be modified or a completely new structure can be created, with doping, using Victory Mesh’s solid modelling capabilities.

Benefits

Optimize 2D or 3D structure meshing for feed-forward to device simulation or RC extraction
Perform edits like crop, slice, mirror and more
Automated mesh refinement based on user specifications
Create 2D or 3D Devices using Solid Modeling techniques

Applications

Advanced CMOS and Bulk CMOS, PDSOI, FDSOI, FinFET
Power, RF, and BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
Display and Amorphous- and Poly-Si TFT, IGZO TFT, LED, OLED, MicroLED
Optoelectronics and CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell

Core Functionality

Executable from within the Deckbuild TCAD graphical user interface, Victory Mesh accepts input such as:

Silvaco standard structure file format (.str) in 2D and 3D
Saved status from Victory Process semiconductor process simulator in 2D and 3D

Victory Mesh outputs can be:

Visualized within Silvaco Interactive Tools
Exported to Silvaco TCAD Device Simulation for semiconductor device physics simulation, or to Silvaco Parasitic Extraction for field solver based RC extraction
Exported in standard formats (e.g. .stl and .vtk) to 3rd party software

Device Meshing

Victory Mesh provides a selection of schemes for meshing of devices. These provide the flexibility to choose mesh type and density to suit specific simulation needs

Delaunay&uses unstructured sampling with local refinement
Conformal&uses semi-structured Cartesian-based sampling with local refinement in each axis

Included is a number of Delaunay local refinement schemes, both general and TCAD-specific:

Uniform, Impurity, Junction, Iso-surface, Interface, Shape, Approximation Distance, and Quality

Each refinement scheme can be applied to regions of specific materials or user-defined attributes

Solid Modeling

Victory Mesh contains support for a selection of solid modeling operations, such as geometric transformation, shape generation, joining and cropping of structures, and analytic doping profiles. These allow existing structures to be modified, as well as the creation of new devices completely inside the application.

Some typical use-cases include:

Mirroring some fraction of a device to produce a whole symmetric device
Stretching a compressed device to match the correct dimensions
Cropping a small localised part of a device for further analysis
Creating a new device by joining user-defined shapes and inserting Gaussian doping profiles
Replacing regions with simulated polycrystalline grains in an existing structure
Applying a bending transformation to an existing structure

The output of the solid modeling commands can then be remeshed as usual before device simulation