• Power Devices Solutions

Silvaco Victory TCAD solutions enable ultra-fast development

of SiC, GaN, and Si Power Devices.

Wide-bandgap semiconductors based on Silicon Carbide (SiC), Gallium Nitride (GaN), and Silicon are driving a rapid transition in Power Devices to meet the requirements of Automotive, 5G, Industrial, Consumer, High Performance Computing, Aerospace and Defense markets.

Silvaco TCAD driven power device development and modeling solutions are key to dramatically reducing development time and costs, while accelerating time to market.

Power Devices

Silicon Carbide and Silicon

SiC Si Power Device Markets

PIN Diode, Schottky Barrier Diode (SBD), DMOSFETs, Junction Gate FETs (JFETs), Insulated Gate Bipolar Transistor (IGBT), Bipolar Junction Transistor (BJT), Thyristor, Superjunction Device, Edge Termination Structures

RF Power Devices

Gallium Nitride

GaN Power Device Markets

Schottky / PIN Diode, Lateral HEMT, Vertical HEMT, Metal Insulator Semiconductor (MIS) HEMT, p-GaN gate HEMT, Multichannel HEMT, Superjunction Device

Lean more about developing SiC and Silicon Power Devices in the Victory TCAD SiC and Silicon Development Overview

Lean more about developing GaN Power Devices in the Victory TCAD GaN Development Overview

Power Device Development Overview

TCAD driven development and modeling of power device technologies enables device engineers to make virtual changes in operating conditions, device technology, or in semiconductor technology during development. This exploration builds qualitative and then quantitative understanding of the target power device under development. Iterative simulation then allows engineers to optimize device performance and operating parameters dramatically reducing the time and costs needed to reach volume production.

TCAD Development Flow

TCAD Power Device Development Flow

Process

Victory Process virtualizes your process flow

Optimize your next generation power device through virtual fabrication

Full 2D / 3D TCAD Process Simulation and Emulation Solution

  • Build, debug, calibrate in fast 2D
  • Easy transition to realistic 3D for full 3D technology design
  • Seamless integration into Device Simulation

Process simulation for SiC, GaN, and Si

  • Etch and Deposition
  • Implantation
  • Dopant Activation
  • Oxidation
  • Stress
  • Open Model Library and Material database
Victory Device Power Device Development

Device

Victory Device meets the breadth and depth of any power device simulation requirements

Full 2D / 3D TCAD Device Simulation and Emulation Solution

  • Simulate DC, AC and transient electrical simulation
  • Self-Heating Simulation
  • Reliability and Radiation
  • MixedMode circuit/device simulation

User-customizable physical models and material parameters

  • Calibrate any simulated device to your experimental data
  • Novel wide bandgap materials can be simulated by adjusting the physical parameters

Advance numerical solvers and methods

  • Multithreaded simulations and numerical extended precision available for the more difficult simulations

Modeling and SPICE Simulation

Utmost IV provides fast and accurate SPICE model generation

SmartSpice delivers high accuracy simulation results

Utmost IV extracts and validates SPICE parametric models

  • TCAD flow integration
  • High speed model generation
  • Breadth and depth of available compact models
  • Spice parameter optimization

SmartSpice delivers high speed and accuracy simulation

  • Multiple temperatures, wafers, die, devices
  • Mixture of DC, Capacitance, S-parameter and extracted data (Vt, Idsat, etc.)
  • Any combination of device model parameters and netlist parameters
Utmost IV SmartSpice Power Device Development

Resources