Silvaco Victory TCAD solutions enable ultra-fast development
of SiC, GaN, and Si Power Devices.
Wide-bandgap semiconductors based on Silicon Carbide (SiC), Gallium Nitride (GaN), and Silicon are driving a rapid transition in Power Devices to meet the requirements of Automotive, 5G, Industrial, Consumer, High Performance Computing, Aerospace and Defense markets.
Silvaco TCAD driven power device development and modeling solutions are key to dramatically reducing development time and costs, while accelerating time to market.
TCAD driven development and modeling of power device technologies enables device engineers to make virtual changes in operating conditions, device technology, or in semiconductor technology during development. This exploration builds qualitative and then quantitative understanding of the target power device under development. Iterative simulation then allows engineers to optimize device performance and operating parameters dramatically reducing the time and costs needed to reach volume production.
TCAD Development Flow
Victory Process virtualizes your process flow
Optimize your next generation power device through virtual fabrication
Full 2D / 3D TCAD Process Simulation and Emulation Solution
Build, debug, calibrate in fast 2D
Easy transition to realistic 3D for full 3D technology design
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