• Technical Library

Simulation Standard

A Journal for Process and Device Engineers

Optimizing a 2um, 1,500 Volt SiC Superjunction Trench-MOS Device Using TCAD

In this paper the critical design features of a SiC superjunction trench MOS device were optimized using CAD to obtain a high breakdown voltage while minimizing any unnecessary increase in channel resistance.

TCAD Simulation of CBRAM Devices

Conductive Bridge Random Access Memory (CBRAM) is a non-volatile memory device technology that can operate by consuming very low power. Another advantage of the CBRAM devices is its ability to be easily integrated into conventional back-end-of-line CMOS processes [1].

TCAD Mixed-Mode Simulation for GaN Power HEMTs in Unclamped Inductive Switching

The qualification of GaN power high-electron-mobilitytransistors (HEMTs) must consider the device ruggedness against out-of-SOA (safe operating area) events [1- 3].

Using Victory Process Open Model Interface to Customize Etch Emulation Model – Example

Dry etching is commonly used in semiconductor processing to generate deep trenches with good anisotropy. Dry etching is applied to many semiconductor technologies including Advanced FinFETs, 3D NAND, and vertical Silicon and Silicon Carbide power devices.

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 2: Meshing – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 2: Meshing – New Features in 2020 Baseline Release
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