• Technical Library

Simulation Standard

A Journal for Process and Device Engineers

simstd Sep2021

Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT

Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT
Simstd Aug2021

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification
Q3_July2021

2021 TCAD Baseline Release

New Features in 2021 Baseline Release: Section 1: Process Simulation Section 2: Device Simulation Section 3: Victory Mesh Section 4: Parasitic Extraction
simstd_Jun_2021_a1

An Introduction to Meshing in Victory Process

Victory Process (VP) uses two types of mesh to represent the structure: • The geometry mesh, which is used to represent the material regions. • The volume mesh, which is used to represent the volume data (doping etc).
SS_may2021

Compact Multi-Level Digital-to-Analog Conversion Using Thin-Film Multimodal Transistors

Unlike conventional ohmic contact thin-film transistors (TFTs), contact-controlled TFTs [1], [2] rely on source energy barriers to produce a range of benefits including: low saturation voltages; extremely high intrinsic gain; power-efficiency; electrical stability; and uniformity of operation, notably with imprecise processes [3]. Generally, these benefits come at the expense of transconductance, however in materials such as polysilicon, similar levels of on-current can be obtained in a more compact footprint without any trace of kink-effect [4], [5].
SSApril2021

Investigation and Explanation of PiPiN Avalanche Photo-Diode Characteristics

In this article, the operation of avalanche photo-diodes in the medium gain, continuous operation mode is investigated. In other words, we are not considering diode operation in transient “Gieger” or “single photon” detection mode, but rather in a region safely below secondary breakdown, where a well-designed avalanche photo diode can exhibit a moderate photo-generated current multiplication factor of an order of magnitude or higher.