Victory Atomistic Device and Nanostructure Simulator
Nanotechnology products exhibit advanced quantum physical effects. Victory Atomistic aims to provide quantum and semi-classical hybrid solution in the domain of nanostructure properties like strain relaxation, phonon modes, electronic structure using the tight-binding model, self–consistent Schrödinger-Poisson calculations, and quantum transport.
Read more about Silvaco’s partnership with Purdue University HERE.
- Scalable from a few atoms to a million-atom structure
- Self-consistent Schrödinger&Poisson solver giving first principle understanding of device operation at atomistic level
- Non-Equilibrium Green’s Functions (NEGF) solver for an accurate simulation of I(V) characteristics including coherent and incoherent scattering mechanisms
- Mode space and Büttiker probe like advanced optimization techniques reducing computational load
- Results can be easily fed into a TCAD simulation, thus providing better calibrated parameters for classical or semi-classical TCAD simulation
- Advanced CMOS, TFETs
- 2D material devices including novel materials like TMDs
- Quantum confinement devices, such as quantum dots and wells
- Electron transport including scattering effects, for FinFETs, quantum wires, slabs
- Optical devices including LEDs.
- Study of Topological Insulators.
- Experimental new device structures.
Simulation Framework for Device-packaging Co-design for Power Electronics
Understanding of Geometrical Boundary Conditions in Victory Process
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations
How to Search, View and Use Default Parameters from the Silvaco Material DataBase SMDB with DeckBuild