Victory Process 2D and 3D Layout-Driven Simulator

Analytical implantation mode

• Experimentally verified Pearson and double-Pearson analytical models, including user-defined moments
• Import doping profiles
• Analytical profiles (Gaussian, ERFC)

Monte-Carlo (MC) implantation mode

• Binary Collision Approximation Monte Carlo calculations for crystalline and amorphous materials
• Universal tilt and rotation capability for Monte Carlo calculations
• Empirical models for implantation induced crystal damage; Plus-one model for point defect, <311> cluster model

• Impurity diffusion in general multi-material structures in 1D, 2D, and 3D
• Comprehensive set of default models:
  • Direct / Fick model, Fermi model, Fully Coupled model, Five-stream model,  Single-pair model, Single-pair model for interstitial supersaturation, Two-Dimensional model, Grain-based polysilicon model
• Empirical and transient activation models
• Point defect trapping and clustering models
• Coupled with oxidation&oxidation enhanced diffusion
• Open modeling interface for user-defined diffusion and activation models
• Open and flexible material database for modeling parameters

• Calibrated Silicon and Silicon Carbide oxidation
• No limitation on materials that can be oxidized. Expansion via Open Model Interface and Open Material Database
• Three modes of operation:
  • Analytical, Empirical (Massoud Model), & Full physical mode
• In the full physical mode
  • the oxygen transport and material flow are solved numerically
  • Stress calculation including impact on oxidation characteristics
  • Influence of the ambient composition
  • Crystal orientation effects
  • Influence of doping on the oxidation rate

• Fast geometrical deposition models for structure prototyping
• Physical conformal and non-conformal deposition models with selectivity
• Physical directional deposition models. Shading and visibility effects are taken into account at feature level
• Secondary effects are taken into account, including reflection of deposited material
• Multi-particle physical deposition models are supported
• Ion beam deposition model with comprehensive beam control, material-specific tabulated sticking functions
• Epitaxy simulation based on selective deposition models. Isotropic as well as anisotropic growth characteristics

• Fast geometrical etching models for structure prototyping
• Physical ideal wet etching with isotropic and anisotropic etching characteristics
• Idealized physical dry etching with selectivity
• Physical etching of complex multi-material structures with selectivity
• Shading and visibility effects are taken into account
• Secondary effects are taken into account including reflection of reactive particles & redeposition of extracted material
• Multi-particle physical etching models supported, for example Ion Enhanced Chemical Etch model
• Ion milling model with comprehensive beam controls, material-specific tabulated yield functions

• Based on GDSII layout
• Two dimensional, large numerical aperture, and aerial image formation
• Extensive source and pupil plane filtering for enhanced aerial images
• Full phase shift and transmittance variation mask capabilities

• Stress analysis during or after process simulation, on arbitrary 2D or 3D structure
• Models for various sources of strain and stress:
  • Thermal mismatch between material layers
  • Local lattice mismatch due to material interfaces of dissimilar materials
  • Initial deposit stress in specified regions
  • External (hydro-static) stress from capping layers
  • Stress/strain generated in previous processing step (e.g., oxidation).
• Stress simulation for various crystalline (e.g., Si, SiGe, GaAs) materials with anisotropic stress accounting for wafer orientation, and isotropic (e.g., silicon nitride and oxide) materials.