Victory Process
Victory Process 2D & 3D Layout-Driven Simulator
TCAD Process simulation is crucial to develop new technologies, as well as maintain existing semiconductor processes. Virtualizing the manufacturing process allows organizations to maintain a “digital twin” of their semiconductor process. Changes in process can be well understood; maximizing device performance, increase manufacturing yield, while minimizing number of engineering cycles and cycle time.
Benefits
- Allow optimization of existing processes and provides predictive scaling behavior
- Increase understanding of novel technology challenges
- Reduce mask and prototyping foundry cost by replacing experiments by simulation
- Reduce time-to-market by creation of virtual process based PDK prior to silicon for fabless companies
Typical Applications
- Advanced CMOS: FinFET, FDSOI, Bulk CMOS
- Display technology: TFT, LED, OLED
- Power & RF technologies: Silicon BiCMOS & BCD, SiC, GaN
- Optical and photonics: CIS, Solar Cell, Laser, Waveguides, Modulators
Core Functionality
- Automatic switching between 1D, 2D and 3D modes
- Masked-based process simulation, with direct import of GDSII layouts
- Integration within Silvaco TCAD flow
- Run simulations and analyze results with TCAD Interactive tools
- Set up Design of Experiments and Optimization routines with Virtual Wafer Fab
- Export results to TCAD Device Simulation, or for 3D RC extraction
- High performance due to efficient multi-threading
- Open Model Interface to add new semiconductor process physics
- Open Material Database to add new materials and parameters
Ion Implantation
Analytical implantation mode
- Experimentally verified Pearson and double-Pearson analytical models, including user-defined moments
- Import doping profiles
- Analytical profiles (Gaussian, ERFC)
Monte-Carlo (MC) implantation mode
- Binary Collision Approximation Monte Carlo calculations for crystalline and amorphous materials
- Universal tilt and rotation capability for Monte Carlo calculations
- Empirical models for implantation induced crystal damage; Plus-one model for point defect, <311> cluster model
Dopant Diffusion & Activation
- Impurity diffusion in general multi-material structures in 1D, 2D, and 3D
- Comprehensive set of default models:
- Direct / Fick model, Fermi model, Fully Coupled model, Five-stream model, Single-pair model, Single-pair model for interstitial supersaturation, Two-Dimensional model, Grain-based polysilicon model
- Empirical and transient activation models
- Point defect trapping and clustering models
- Coupled with oxidation&oxidation enhanced diffusion
- Open modeling interface for user-defined diffusion and activation models
- Open and flexible material database for modeling parameters
Oxidation
- Calibrated Silicon and Silicon Carbide oxidation
- No limitation on materials that can be oxidized. Expansion via Open Model Interface and Open Material Database
- Three modes of operation:
- Analytical, Empirical (Massoud Model), & Full physical mode
- In the full physical mode
- the oxygen transport and material flow are solved numerically
- Stress calculation including impact on oxidation characteristics
- Influence of the ambient composition
- Crystal orientation effects
- Influence of doping on the oxidation rate
Deposition & Epitaxy
- Fast geometrical deposition models for structure prototyping
- Physical conformal and non-conformal deposition models with selectivity
- Physical directional deposition models. Shading and visibility effects are taken into account at feature level
- Secondary effects are taken into account, including reflection of deposited material
- Multi-particle physical deposition models are supported
- Ion beam deposition model with comprehensive beam control, material-specific tabulated sticking functions
- Epitaxy simulation based on selective deposition models. Isotropic as well as anisotropic growth characteristics
Etching
- Fast geometrical etching models for structure prototyping
- Physical ideal wet etching with isotropic and anisotropic etching characteristics
- Idealized physical dry etching with selectivity
- Physical etching of complex multi-material structures with selectivity
- Shading and visibility effects are taken into account
- Secondary effects are taken into account including reflection of reactive particles & redeposition of extracted material
- Multi-particle physical etching models supported, for example Ion Enhanced Chemical Etch model
- Ion milling model with comprehensive beam controls, material-specific tabulated yield functions
Photolithography
- Based on GDSII layout
- Two dimensional, large numerical aperture, and aerial image formation
- Extensive source and pupil plane filtering for enhanced aerial images
- Full phase shift and transmittance variation mask capabilities
Stress & Strain
- Stress analysis during or after process simulation, on arbitrary 2D or 3D structure
- Models for various sources of strain and stress:
- Thermal mismatch between material layers
- Local lattice mismatch due to material interfaces of dissimilar materials
- Initial deposit stress in specified regions
- External (hydro-static) stress from capping layers
- Stress/strain generated in previous processing step (e.g., oxidation).
- Stress simulation for various crystalline (e.g., Si, SiGe, GaAs) materials with anisotropic stress accounting for wafer orientation, and isotropic (e.g., silicon nitride and oxide) materials.
TCAD Resources
Presentations
- DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
- Optical Simulations – Light Emitting and Absorbing Devices
- Power Device Solutions – Full TCAD to SPICE Flow
- Parasitic Extraction – Full Chip and Cell Level RC Extraction
- Process Simulation Options – Four Ways to Create a Physical Structure
- Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
- Victory Atomistic – Practical Atomic-Scale Simulation
Product Briefs
Published Papers
Simulation Standard
Webinars
Videos
Webinar Preview: TCAD Introduction and the Basics Part 1
TCAD Introduction and the Basics-Part 3
Webinar Preview: Optimization of the Select Gate Transistor in a 3D NAND Memory Cell
TCAD Simulation of Wide Bandgap Power Devices&Webinar Preview
Leakage Current TCAD Calibration in a Si TFTs Preview
TCAD Simulation of Organic Optoelectronic Devices
TCAD Simulation of Ion Transport and Electrochemistry
Solar cell modeling using TCAD and SPICE
How to Search the TCAD Examples
Dr. Eric Guichard, Vice President of the TCAD Division, Display Week 2019 Interview
Vincent Lee, CEO of Lumiode, Display Week 2019 Interview
Simulation of Reliability and NBTI Aging in MOS Microelectronics
Modeling and Analysis of Single Event Effects&Webinar Preview
Simulation of Physical Etching in Memory
News
Blogs
Customers
Takashi Shinohe
We are developing gallium oxide devices with a completely new proprietary manufacturing method. Utilizing a device simulator will become important in order to efficiently develop such new devices. For the decision to use Silvaco’s device simulator, the deciding factors were Silvaco’s extensive track record with wide band gap semiconductors, and Silvaco’s depth of knowledge of power devices. We expect to see even more progress in our development of GaO™ power devices as we move toward practical applications.
FLOSFIA
CTO
Coby Hanoch
Silvaco provides state-of-the-art device models and TCAD tools that are widely used by semiconductor companies. We are excited to establish this joint development program with Silvaco so customers will have early access to our ReRAM technology on the most powerful simulation tools in the industry and can fast-track the release of their next-generation products. This is another key step by Weebit Nano to accelerate the incorporation of ReRAM technology by a larger number of OEM customers.
Weebit Nano
CEO
Investigation and Explanation of PiPiN Avalanche Photo-Diode Characteristics
How do I create complex shapes with fixed cross sections in Victory Mesh?
Parabolic Grading of a PHEMT Channel Composition for Ultra-High and Broad OIP3 Peak
TCAD Investigation of Total Ionizing Dose (TID) Effects on Gallium Nitride HEMTs