Victory Mesh
Victory Mesh Generation, Remeshing, and Solid Modeling
Victory Mesh provides users with power functionality to mesh and refine existing 2D and 3D TCAD structures, as well as solid modeling capabilities to generate new 2D and 3D structures. A typical use-case involves raw geometrical and doping data from Victory Process as input to produce a refined mesh that is suitable for device simulation in Victory Device or 3D parasitic extraction in Clever. Alternatively, the geometry of an existing device can be modified or a completely new structure can be created, with doping, using Victory Mesh’s solid modelling capabilities.
Benefits
- Optimize 2D or 3D structure meshing for feed-forward to device simulation or RC extraction
- Perform edits like crop, slice, mirror and more
- Automated mesh refinement based on user specifications
- Create 2D or 3D Devices using Solid Modeling techniques
Applications
- Advanced CMOS&Bulk CMOS, PDSOI, FDSOI, FinFET
- Power & RF&BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
- Display&Amorphous- and Poly-Si TFT, IGZO TFT, LED, OLED, MicroLED
- Optoelectronics&CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell
Core Functionality
Executable from within the Deckbuild TCAD graphical user interface, Victory Mesh accepts input such as:
- Silvaco standard structure file format (.str) in 2D and 3D
- Saved status from Victory Process semiconductor process simulator in 2D and 3D
Victory Mesh outputs can be:
- Visualized within Silvaco Interactive Tools
- Exported to Silvaco TCAD Device Simulation for semiconductor device physics simulation, or to Silvaco Parasitic Extraction for field solver based RC extraction
- Exported in standard formats (e.g. .stl and .vtk) to 3rd party software
Device Meshing
Victory Mesh provides a selection of schemes for meshing of devices. These provide the flexibility to choose mesh type and density to suit specific simulation needs
- Delaunay&uses unstructured sampling with local refinement
- Conformal&uses semi-structured Cartesian-based sampling with local refinement in each axis
Included is a number of Delaunay local refinement schemes, both general and TCAD-specific:
- Uniform, Impurity, Junction, Iso-surface, Interface, Shape, Approximation Distance, and Quality
Each refinement scheme can be applied to regions of specific materials or user-defined attributes
Solid Modeling
Victory Mesh contains support for a selection of solid modeling operations, such as geometric transformation, shape generation, joining and cropping of structures, and analytic doping profiles. These allow existing structures to be modified, as well as the creation of new devices completely inside the application.
Some typical use-cases include:
- Mirroring some fraction of a device to produce a whole symmetric device
- Stretching a compressed device to match the correct dimensions
- Cropping a small localised part of a device for further analysis
- Creating a new device by joining user-defined shapes and inserting Gaussian doping profiles
- Replacing regions with simulated polycrystalline grains in an existing structure
- Applying a bending transformation to an existing structure
The output of the solid modeling commands can then be remeshed as usual before device simulation
TCAD Resources
Presentations
- Parasitic Extraction Clever and Hipex FS – Integrated Full Chip and Cell Level RCX Combine Rule Based and Field Solver Solutions
- DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
- Optical Simulations – Light Emitting and Absorbing Devices
- Power Device Solutions – Full TCAD to SPICE Flow
- Parasitic Extraction – Full Chip and Cell Level RC Extraction
- Process Simulation Options – Four Ways to Create a Physical Structure
- Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
- Victory Atomistic – Practical Atomic-Scale Simulation
Product Briefs
Published Papers
Simulation Standard
Webinars
Videos
Webinar Preview: TCAD Introduction and the Basics Part 1
TCAD Introduction and the Basics-Part 3
Webinar Preview: Optimization of the Select Gate Transistor in a 3D NAND Memory Cell
TCAD Simulation of Wide Bandgap Power Devices&Webinar Preview
Leakage Current TCAD Calibration in a Si TFTs Preview
TCAD Simulation of Organic Optoelectronic Devices
TCAD Simulation of Ion Transport and Electrochemistry
Solar cell modeling using TCAD and SPICE
How to Search the TCAD Examples
Dr. Eric Guichard, Vice President of the TCAD Division, Display Week 2019 Interview
Vincent Lee, CEO of Lumiode, Display Week 2019 Interview
Simulation of Reliability and NBTI Aging in MOS Microelectronics
Modeling and Analysis of Single Event Effects&Webinar Preview
Simulation of Physical Etching in Memory
How to Search, View and Use Default Parameters from Silvaco Material DataBase SMDB with DeckBuild
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
Writing an Impurity Activation Model with the Open Model Library
User Probes and Arbitrary Parameter Sweeps in Victory Device