Victory Mesh Generation, Remeshing, and Solid Modeling

Victory Mesh provides users with power functionality to mesh and refine existing 2D and 3D TCAD structures, as well as solid modeling capabilities to generate new 2D and 3D structures. A typical use-case involves raw geometrical and doping data from Victory Process as input to produce a refined mesh that is suitable for device simulation in Victory Device or 3D parasitic extraction in Clever. Alternatively, the geometry of an existing device can be modified or a completely new structure can be created, with doping, using Victory Mesh’s solid modelling capabilities.

Benefits

Optimize 2D or 3D structure meshing for feed-forward to device simulation or RC extraction
Perform edits like crop, slice, mirror and more
Automated mesh refinement based on user specifications
Create 2D or 3D Devices using Solid Modeling techniques

Applications

Advanced CMOS&Bulk CMOS, PDSOI, FDSOI, FinFET
Power & RF&BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
Display&Amorphous- and Poly-Si TFT, IGZO TFT, LED, OLED, MicroLED
Optoelectronics&CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell

Core Functionality

Executable from within the Deckbuild TCAD graphical user interface, Victory Mesh accepts input such as:

Silvaco standard structure file format (.str) in 2D and 3D
Saved status from Victory Process semiconductor process simulator in 2D and 3D

Victory Mesh outputs can be:

Visualized within Silvaco Interactive Tools
Exported to Silvaco TCAD Device Simulation for semiconductor device physics simulation, or to Silvaco Parasitic Extraction for field solver based RC extraction
Exported in standard formats (e.g. .stl and .vtk) to 3rd party software

Device Meshing

Victory Mesh provides a selection of schemes for meshing of devices. These provide the flexibility to choose mesh type and density to suit specific simulation needs

Delaunay&uses unstructured sampling with local refinement
Conformal&uses semi-structured Cartesian-based sampling with local refinement in each axis

Included is a number of Delaunay local refinement schemes, both general and TCAD-specific:

Uniform, Impurity, Junction, Iso-surface, Interface, Shape, Approximation Distance, and Quality

Each refinement scheme can be applied to regions of specific materials or user-defined attributes

Solid Modeling

Victory Mesh contains support for a selection of solid modeling operations, such as geometric transformation, shape generation, joining and cropping of structures, and analytic doping profiles. These allow existing structures to be modified, as well as the creation of new devices completely inside the application.

Some typical use-cases include:

Mirroring some fraction of a device to produce a whole symmetric device
Stretching a compressed device to match the correct dimensions
Cropping a small localised part of a device for further analysis
Creating a new device by joining user-defined shapes and inserting Gaussian doping profiles
Replacing regions with simulated polycrystalline grains in an existing structure
Applying a bending transformation to an existing structure

The output of the solid modeling commands can then be remeshed as usual before device simulation

Conformal (left) - User specified structured Cartesian mesh. Delaunay (right) - Automated feature and quantity-dependent unstructured mesh.

TCAD Resources

Application Examples

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Presentations

DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
Optical Simulations – Light Emitting and Absorbing Devices
Power Device Solutions – Full TCAD to SPICE Flow
Parasitic Extraction – Full Chip and Cell Level RC Extraction
Process Simulation Options – Four Ways to Create a Physical Structure
Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
Victory Atomistic – Practical Atomic-Scale Simulation

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Product Briefs

Victory Atomistic – Nanostructure Simulation	Interactive Tools – Pre and Post Processing Tools
Victory Device – Device Simulation	VWF – Virtual Wafer Fab
Victory Process – Process Simulation	Clever – RC Extractor for Realistic 3D Structures
Victory Mesh – Meshing & Solid Modeling	Hipex – Full-chip Rule-based RC Parasitic Extraction

Published Papers

Nanoscale Devices

Solar Cells

MEMS

Memory Devices

Optoelectronics

Radiation, SEU and Reliability

Power Device Simulation

ESD Simulation

Organic Device Technology

Interconnect Simulation

SOI Technology

TFT Technology

Compound Devices

CMOS Technology

Process Simulation

Bipolar Technology

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Simulation Standard

Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification

2021 TCAD Baseline Release

An Introduction to Meshing in Victory Process

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Webinars

100X Faster Nano Device Atomistic TCAD Simulation with Victory Atomistic

Simulation of Silicon and Perovskite Based Tandem Solar Cells Using TCAD

Achieve Your Display Design Performance Edge Through Precision Parasitic Extraction

GaN-Based LEDs – Combining Process and Device TCAD to Optimize Substrate Patterning and Maximize Light Extraction Efficiency

How to Modify Material and Modeling Properties with Silvaco Victory TCAD Solution

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Whitepapers

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Comprehensive Design Solutions for Display Technology

Download White Paper

Videos

News

Silvaco Announces Resignation of CEO

iDEAL Semiconductor Adopts Silvaco Victory TCAD Solution for the Development of Next-Gen High Efficiency Power Devices

Silvaco Names Mike Stipe as Senior VP of Worldwide Sales to Accelerate its Growth

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Blogs

Silvaco at Upcoming Solid-State Conferences – ESSDERC 2020 and SISPAD 2020

Accelerating Design with the Victory TCAD Suite

TCAD Simulations of RF-SOI Switches with Trap-Rich Substrate

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Customers

Coby Hanoch

Silvaco provides state-of-the-art device models and TCAD tools that are widely used by semiconductor companies. We are excited to establish this joint development program with Silvaco so customers will have early access to our ReRAM technology on the most powerful simulation tools in the industry and can fast-track the release of their next-generation products. This is another key step by Weebit Nano to accelerate the incorporation of ReRAM technology by a larger number of OEM customers.

Weebit Nano

CEO

Takashi Shinohe

We are developing gallium oxide devices with a completely new proprietary manufacturing method. Utilizing a device simulator will become important in order to efficiently develop such new devices. For the decision to use Silvaco’s device simulator, the deciding factors were Silvaco’s extensive track record with wide band gap semiconductors, and Silvaco’s depth of knowledge of power devices. We expect to see even more progress in our development of GaO™ power devices as we move toward practical applications.

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CTO

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