Victory Mesh Generation, Remeshing, and Solid Modeling
Victory Mesh provides users with power functionality to mesh and refine existing 2D and 3D TCAD structures, as well as solid modeling capabilities to generate new 2D and 3D structures. A typical use-case involves raw geometrical and doping data from Victory Process as input to produce a refined mesh that is suitable for device simulation in Victory Device or 3D parasitic extraction in Clever. Alternatively, the geometry of an existing device can be modified or a completely new structure can be created, with doping, using Victory Mesh’s solid modelling capabilities.
Benefits
- Optimize 2D or 3D structure meshing for feed-forward to device simulation or RC extraction
- Perform edits like crop, slice, mirror and more
- Automated mesh refinement based on user specifications
- Create 2D or 3D Devices using Solid Modeling techniques
Applications
- Advanced CMOS – Bulk CMOS, PDSOI, FDSOI, FinFET
- Power & RF – BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
- Display – Amorphous- and Poly-Si TFT, IGZO TFT, LED, OLED, MicroLED
- Optoelectronics – CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell
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Customers
Coby Hanoch
Silvaco provides state-of-the-art device models and TCAD tools that are widely used by semiconductor companies. We are excited to establish this joint development program with Silvaco so customers will have early access to our ReRAM technology on the most powerful simulation tools in the industry and can fast-track the release of their next-generation products. This is another key step by Weebit Nano to accelerate the incorporation of ReRAM technology by a larger number of OEM customers.
Weebit Nano
CEO
Takashi Shinohe
We are developing gallium oxide devices with a completely new proprietary manufacturing method. Utilizing a device simulator will become important in order to efficiently develop such new devices. For the decision to use Silvaco’s device simulator, the deciding factors were Silvaco’s extensive track record with wide band gap semiconductors, and Silvaco’s depth of knowledge of power devices. We expect to see even more progress in our development of GaO™ power devices as we move toward practical applications.
FLOSFIA
CTO
Optimizing a 2um, 1,500 Volt SiC Superjunction Trench-MOS Device Using TCAD
TCAD Simulation of CBRAM Devices
TCAD Mixed-Mode Simulation for GaN Power HEMTs in Unclamped Inductive Switching
Using Victory Process Open Model Interface to Customize Etch Emulation Model – Example