Victory Device
Victory Device Simulator
TCAD device simulation is key to develop next generation semiconductor devices, giving insights into complex physical phenomena. Victory Device can execute physics-based device simulations to predict and understand device performance.
Benefits
- Electrical, chemical, thermal and optical characterization of advanced semiconductor devices allows for device performance optimization
- Understanding the challenges of current technologies leads to reduced product development time
- Exploration of novel device technologies for next-generation devices
Applications
- Advanced CMOS, Bulk CMOS, PDSOI, FDSOI, FinFET
- Power and RF, BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
- Display Technology – Amorphous-Si, Poly-Si, and IGZO TFT, LED, OLED, MicroLED
- Optoelectronics, CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell
Core Functionality
- General purpose 2D/3D device simulator, drift-diffusion and energy balance transport equations
- DC, AC, and transient analysis
- Tetrahedral mesh for accurate 3D geometry representation. Voronoi discretization for Delaunay meshes
- Advanced physical models with user-customizable material database for silicon and compound materials
- Stress-dependent mobility and bandgap models
- Highly customizable physical models using the C-Interpreter or dynamically linked libraries
- Advanced multi-threaded numerical solver library with support for distributed computing. 64-bit, 80-bit, 128-bit, 160-bit, 256-bit and 320-bit precision
- Atlas Legacy-compatible
Self-Heating
- The “Giga” module works as a module in conjunction with the core 2D/3D simulator
- Giga enables self-consistent simulation of self-heating effects including
- heat generation,
- heat flow, lattice heating,
- heat sinks,
- and temperature-dependent material parameters
- Local temperature is solved self-consistently with along with device physics models, influencing device electrical performance as localized heat up occurs during simulated operation
Optics
- Silvaco “Luminous” module works as a module in conjunction with the core 2D/3D simulator
- Luminous allows model light absorption and photo-generation in non-planar semiconductor devices in arbitrary topologies in 2D and 3D
- Can account for internal and external reflections and refractions, polarization dependencies and dispersion
- Can simulate mono-chromatic or multi-spectral optical sources, and provides special parameter extraction capabilities unique to optoelectronics
- DC, AC, transient, and spectral optical responses
- Available Methods
- Frequency domain& Ray Trace, Transfer Matrix Method (TMM), Mode Solver, Beam Propagation Method (BPM)
- Time Domain
- Ray Trace, Finite Difference Time Domain (FDTD)
Circuit Co-Simulation
- “MixedMode” module works as a module in conjunction with the core 2D/3D simulator
- Allows for co-simulation of one or more drift-diffusion-based 2D and/or 3D TCAD devices integrated into a SPICE circuit network
- Physics-based devices are used when accurate compact models do not exist, or when devices that play a critical role must be simulated with very high accuracy. TCAD devices can utilize all physics available in a stand-alone TCAD simulation
- SPICE netlist defines passive and active SPICE elements
- Define intentional and parasitic resistances, capacitances, and inductances
- Wide array of industry standard compact models available as well as Verilog-A model support
Radiation Effects
- Radiation Effects (REM) and Single Event Effects (SEE) module works as a module in conjunction with the core 2D/3D simulator
- Physics related to radiation’s impact on semiconductor device operation can be studied
- Areas of Use
- Total Dose Effects in Insulators – electron hole pair generation, recombination, carrier transport and trap and de-trap
- Single Event Effects – Charge generation as a function of photocurrent density and Linear Energy Transfer
- Dose Rate Effects&photo-generation and recombination, and flow of current within device
- Displacement Damage Modeling&Non-ionizing energy loss model modifying material lifetimes, more detailed modeling via user defined lattice defect modeling layers
- Flexible C-interpreter routines to prototype custom models for photogeneration, recombination, and charge trapping
- Electro-Chemistry module for hydrogen transport simulation
Electro-Chemistry
- The Chemistry module works as a module in conjunction with the core 2D/3D simulator
- Captures electrochemical reaction and transport of an arbitrary number of chemical species as applied to general semiconductor device physics phenomena
- Hydrogen transport for device reliability. Bias stressing, hydrogen transport effects due to radiation exposure
- Next-Generation non-volatile memory&CBRAM, oxRAM, etc
- Ionic transport in batteries or semiconductor based ionic sensors
TCAD Resources
Presentations
- Parasitic Extraction Clever and Hipex FS – Integrated Full Chip and Cell Level RCX Combine Rule Based and Field Solver Solutions
- DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
- Optical Simulations – Light Emitting and Absorbing Devices
- Power Device Solutions – Full TCAD to SPICE Flow
- Parasitic Extraction – Full Chip and Cell Level RC Extraction
- Process Simulation Options – Four Ways to Create a Physical Structure
- Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
- Victory Atomistic – Practical Atomic-Scale Simulation
Product Briefs
Published Papers
Simulation Standard
Webinars
How to Search, View and Use Default Parameters from Silvaco Material DataBase SMDB with DeckBuild
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
Writing an Impurity Activation Model with the Open Model Library
User Probes and Arbitrary Parameter Sweeps in Victory Device