Victory Device
Victory Device Simulator
TCAD device simulation is key to develop next generation semiconductor devices, giving insights into complex physical phenomena. Victory Device can execute physics-based device simulations to predict and understand device performance.
Benefits
- Electrical, chemical, thermal and optical characterization of advanced semiconductor devices allows for device performance optimization
- Understanding the challenges of current technologies leads to reduced product development time
- Exploration of novel device technologies for next-generation devices
Applications
- Advanced CMOS – Bulk CMOS, PDSOI, FDSOI, FinFET
- Power & RF – BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
- Display Technology – Amorphous-Si, Poly-Si, and IGZO TFT, LED, OLED, MicroLED
- Optoelectronics – CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell
Core Functionality
- General purpose 2D/3D device simulator, drift-diffusion and energy balance transport equations
- DC, AC, and transient analysis
- Tetrahedral mesh for accurate 3D geometry representation. Voronoi discretization for Delaunay meshes
- Advanced physical models with user-customizable material database for silicon and compound materials
- Stress-dependent mobility and bandgap models
- Highly customizable physical models using the C-Interpreter or dynamically linked libraries
- Advanced multi-threaded numerical solver library with support for distributed computing. 64-bit, 80-bit, 128-bit, 160-bit, 256-bit and 320-bit precision
- Atlas Legacy-compatible
Self-Heating
- The “Giga” module works as a module in conjunction with the core 2D/3D simulator
- Giga enables self-consistent simulation of self-heating effects including
- heat generation,
- heat flow, lattice heating,
- heat sinks,
- and temperature-dependent material parameters
- Local temperature is solved self-consistently with along with device physics models, influencing device electrical performance as localized heat up occurs during simulated operation
Optics
- Silvaco “Luminous” module works as a module in conjunction with the core 2D/3D simulator
- Luminous allows model light absorption and photo-generation in non-planar semiconductor devices in arbitrary topologies in 2D and 3D
- Can account for internal and external reflections and refractions, polarization dependencies and dispersion
- Can simulate mono-chromatic or multi-spectral optical sources, and provides special parameter extraction capabilities unique to optoelectronics
- DC, AC, transient, and spectral optical responses
- Available Methods
- Frequency domain – Ray Trace, Transfer Matrix Method (TMM), Mode Solver, Beam Propagation Method (BPM)
- Time Domain
- Ray Trace, Finite Difference Time Domain (FDTD)
Circuit Co-Simulation
- “MixedMode” module works as a module in conjunction with the core 2D/3D simulator
- Allows for co-simulation of one or more drift-diffusion-based 2D and/or 3D TCAD devices integrated into a SPICE circuit network
- Physics-based devices are used when accurate compact models do not exist, or when devices that play a critical role must be simulated with very high accuracy. TCAD devices can utilize all physics available in a stand-alone TCAD simulation
- SPICE netlist defines passive and active SPICE elements
- Define intentional and parasitic resistances, capacitances, and inductances
- Wide array of industry standard compact models available as well as Verilog-A model support
Radiation Effects
- Radiation Effects (REM) and Single Event Effects (SEE) module works as a module in conjunction with the core 2D/3D simulator
- Physics related to radiation’s impact on semiconductor device operation can be studied
- Areas of Use
- Total Dose Effects in Insulators – electron hole pair generation, recombination, carrier transport and trap and de-trap
- Single Event Effects – Charge generation as a function of photocurrent density and Linear Energy Transfer
- Dose Rate Effects – photo-generation and recombination, and flow of current within device
- Displacement Damage Modeling – Non-ionizing energy loss model modifying material lifetimes, more detailed modeling via user defined lattice defect modeling layers
- Flexible C-interpreter routines to prototype custom models for photogeneration, recombination, and charge trapping
- Electro-Chemistry module for hydrogen transport simulation
Electro-Chemistry
- The Chemistry module works as a module in conjunction with the core 2D/3D simulator
- Captures electrochemical reaction and transport of an arbitrary number of chemical species as applied to general semiconductor device physics phenomena
- Hydrogen transport for device reliability. Bias stressing, hydrogen transport effects due to radiation exposure
- Next-Generation non-volatile memory – CBRAM, oxRAM, etc
- Ionic transport in batteries or semiconductor based ionic sensors
TCAD Resources
Presentations
- DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
- Optical Simulations – Light Emitting and Absorbing Devices
- Power Device Solutions – Full TCAD to SPICE Flow
- Parasitic Extraction – Full Chip and Cell Level RC Extraction
- Process Simulation Options – Four Ways to Create a Physical Structure
- Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
- Victory Atomistic – Practical Atomic-Scale Simulation
Product Briefs
Published Papers
Simulation Standard
Webinars
Videos
Webinar Preview: TCAD Introduction and the Basics Part 1
TCAD Introduction and the Basics-Part 3
Webinar Preview: Optimization of the Select Gate Transistor in a 3D NAND Memory Cell
TCAD Simulation of Wide Bandgap Power Devices - Webinar Preview
Leakage Current TCAD Calibration in a Si TFTs Preview
TCAD Simulation of Organic Optoelectronic Devices
TCAD Simulation of Ion Transport and Electrochemistry
Solar cell modeling using TCAD and SPICE
How to Search the TCAD Examples
Dr. Eric Guichard, Vice President of the TCAD Division, Display Week 2019 Interview
Vincent Lee, CEO of Lumiode, Display Week 2019 Interview
Simulation of Reliability and NBTI Aging in MOS Microelectronics
Modeling and Analysis of Single Event Effects - Webinar Preview
Simulation of Physical Etching in Memory
News
Blogs
Customers
Takashi Shinohe
We are developing gallium oxide devices with a completely new proprietary manufacturing method. Utilizing a device simulator will become important in order to efficiently develop such new devices. For the decision to use Silvaco’s device simulator, the deciding factors were Silvaco’s extensive track record with wide band gap semiconductors, and Silvaco’s depth of knowledge of power devices. We expect to see even more progress in our development of GaO™ power devices as we move toward practical applications.
FLOSFIA
CTO
Coby Hanoch
Silvaco provides state-of-the-art device models and TCAD tools that are widely used by semiconductor companies. We are excited to establish this joint development program with Silvaco so customers will have early access to our ReRAM technology on the most powerful simulation tools in the industry and can fast-track the release of their next-generation products. This is another key step by Weebit Nano to accelerate the incorporation of ReRAM technology by a larger number of OEM customers.
Weebit Nano
CEO
TCAD Investigation of Total Ionizing Dose (TID) Effects on Gallium Nitride HEMTs
Obtaining Spectral Sweeps from 3D Plasmonic Structures
Optimizing a 2um, 1,500 Volt SiC Superjunction Trench-MOS Device Using TCAD
TCAD Simulation of CBRAM Devices