Victory Device Simulator

TCAD device simulation is key to develop next generation semiconductor devices, giving insights into complex physical phenomena. Victory Device can execute physics-based device simulations to predict and understand device performance.

Benefits

Electrical, chemical, thermal and optical characterization of advanced semiconductor devices allows for device performance optimization
Understanding the challenges of current technologies leads to reduced product development time
Exploration of novel device technologies for next-generation devices

Applications

Advanced CMOS, Bulk CMOS, PDSOI, FDSOI, FinFET
Power and RF, BCD, Power Diode, IGBT, Thyristor, GaN HEMT, SiC DMOS, SiC LMOS, etc
Display Technology – Amorphous-Si, Poly-Si, and IGZO TFT, LED, OLED, MicroLED
Optoelectronics, CCD, CMOS Image Sensor, Avalanche Photodiode, PiN Photodiode, Solar Cell

Core Functionality

General purpose 2D/3D device simulator, drift-diffusion and energy balance transport equations
DC, AC, and transient analysis
Tetrahedral mesh for accurate 3D geometry representation. Voronoi discretization for Delaunay meshes
Advanced physical models with user-customizable material database for silicon and compound materials
Stress-dependent mobility and bandgap models
Highly customizable physical models using the C-Interpreter or dynamically linked libraries
Advanced multi-threaded numerical solver library with support for distributed computing. 64-bit, 80-bit, 128-bit, 160-bit, 256-bit and 320-bit precision
Atlas Legacy-compatible

Self-Heating

The “Giga” module works as a module in conjunction with the core 2D/3D simulator
Giga enables self-consistent simulation of self-heating effects including
- heat generation,
- heat flow, lattice heating,
- heat sinks,
- and temperature-dependent material parameters
Local temperature is solved self-consistently with along with device physics models, influencing device electrical performance as localized heat up occurs during simulated operation

Optics

Silvaco “Luminous” module works as a module in conjunction with the core 2D/3D simulator
Luminous allows model light absorption and photo-generation in non-planar semiconductor devices in arbitrary topologies in 2D and 3D
Can account for internal and external reflections and refractions, polarization dependencies and dispersion
Can simulate mono-chromatic or multi-spectral optical sources, and provides special parameter extraction capabilities unique to optoelectronics
DC, AC, transient, and spectral optical responses
Available Methods
- Frequency domain& Ray Trace, Transfer Matrix Method (TMM), Mode Solver, Beam Propagation Method (BPM)
- Time Domain
  - Ray Trace, Finite Difference Time Domain (FDTD)

Circuit Co-Simulation

“MixedMode” module works as a module in conjunction with the core 2D/3D simulator
Allows for co-simulation of one or more drift-diffusion-based 2D and/or 3D TCAD devices integrated into a SPICE circuit network
Physics-based devices are used when accurate compact models do not exist, or when devices that play a critical role must be simulated with very high accuracy. TCAD devices can utilize all physics available in a stand-alone TCAD simulation
SPICE netlist defines passive and active SPICE elements
- Define intentional and parasitic resistances, capacitances, and inductances
- Wide array of industry standard compact models available as well as Verilog-A model support

Radiation Effects

Radiation Effects (REM) and Single Event Effects (SEE) module works as a module in conjunction with the core 2D/3D simulator
Physics related to radiation’s impact on semiconductor device operation can be studied
Areas of Use
- Total Dose Effects in Insulators – electron hole pair generation, recombination, carrier transport and trap and de-trap
- Single Event Effects – Charge generation as a function of photocurrent density and Linear Energy Transfer
- Dose Rate Effects&photo-generation and recombination, and flow of current within device
- Displacement Damage Modeling&Non-ionizing energy loss model modifying material lifetimes, more detailed modeling via user defined lattice defect modeling layers
Flexible C-interpreter routines to prototype custom models for photogeneration, recombination, and charge trapping
Electro-Chemistry module for hydrogen transport simulation

Electro-Chemistry

The Chemistry module works as a module in conjunction with the core 2D/3D simulator
Captures electrochemical reaction and transport of an arbitrary number of chemical species as applied to general semiconductor device physics phenomena
Hydrogen transport for device reliability. Bias stressing, hydrogen transport effects due to radiation exposure
Next-Generation non-volatile memory&CBRAM, oxRAM, etc
Ionic transport in batteries or semiconductor based ionic sensors

Short-circuit test waveforms for an IGBT

Electron current density distribution at IGBT failure point t = 5.57 μs.

TCAD Resources

Application Examples

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Presentations

Parasitic Extraction Clever and Hipex FS – Integrated Full Chip and Cell Level RCX Combine Rule Based and Field Solver Solutions
DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
Optical Simulations – Light Emitting and Absorbing Devices
Power Device Solutions – Full TCAD to SPICE Flow
Parasitic Extraction – Full Chip and Cell Level RC Extraction
Process Simulation Options – Four Ways to Create a Physical Structure
Radiation Effects Module – Total Dose and Single Event Phenomenon, Damage Inducing and Elastic Interactions
Victory Atomistic – Practical Atomic-Scale Simulation

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Product Briefs

Victory Atomistic – Nanostructure Simulation	Interactive Tools – Pre and Post Processing Tools
Victory Device – Device Simulation	VWF – Virtual Wafer Fab
Victory Process – Process Simulation	Victory RCx Pro – RC Extractor for Realistic 3D Structures
Victory Mesh – Meshing & Solid Modeling	Hipex – Full-chip Rule-based RC Parasitic Extraction

Published Papers