Victory Atomistic Device and Nanostructure Simulator

Nanotechnology products exhibit advanced quantum physical effects. Victory Atomistic aims to provide quantum and semi-classical hybrid solution in the domain of nanostructure properties like strain relaxation, phonon modes, electronic structure using the tight-binding model, self–consistent Schrödinger-Poisson calculations, and quantum transport.

Read more about Silvaco’s partnership with Purdue University HERE.

Benefits

Scalable from a few atoms to a million-atom structure
Self-consistent Schrödinger&Poisson solver giving first principle understanding of device operation at atomistic level
Non-Equilibrium Green’s Functions (NEGF) solver for an accurate simulation of I(V) characteristics including coherent and incoherent scattering mechanisms
Mode space and Büttiker probe like advanced optimization techniques reducing computational load
Results can be easily fed into a TCAD simulation, thus providing better calibrated parameters for classical or semi-classical TCAD simulation

Applications

Advanced CMOS, TFETs
2D material devices including novel materials like TMDs
Quantum confinement devices, such as quantum dots and wells
Electron transport including scattering effects, for FinFETs, quantum wires, slabs
Optical devices including LEDs.
Study of Topological Insulators.
Experimental new device structures.

Key Features

Integrated into Silvaco’s TCAD Interactive Tools
Massively parallel — hundreds of thousands of computing nodes is possible
Calculates fundamental band structure properties of crystalline materials from Tight-binding parameters and Wannier90 Hamiltonians.
Supports various crystal symmetry groups including zincblende, wurtzite, simple-cubic, diamond, and trigonal structure of graphene and BiTe

Atomistic Structural Definition

Victory Atomistic employs a material database containing an advanced set of tight-binding parameters of typical as well as novel material systems in microelectronics, ranging from bulk to 2D layers.
Specification of {material, domain, region} combination based on pseudoepitaxy and passivation rules, users can build a complex device architecture with atomic resolution combined with boundary conditions
Victory Atomistic can simulate structures in the order of one million of atoms

Advanced Solvers

Poisson-Schrödinger
Force-field relaxation,
Top-of-the-barrier transport
Quantum Transmission Boundary Method (QTBM)
Non-Equilibrium Green’s Function (NEGF)
Self-consistent Born calculation of carrier scattering including: electron-phonon (acoustic, polar, non-polar), surface roughness, and impurities
Employees advanced methods like Mode-Space and Büttiker probes to optimize the performance of computationally expensive calculations
Handles devices up to 1 million atoms with realistic simulation times.
Multilevel parallelization with MPI