Silvaco Victory TCAD solutions enable ultra-fast development
of SiC, GaN, and Si Power Devices.
Wide-bandgap semiconductors based on Silicon Carbide (SiC), Gallium Nitride (GaN), and Silicon are driving a rapid transition in Power Devices to meet the requirements of Automotive, 5G, Industrial, Consumer, High Performance Computing, Aerospace and Defense markets.
Silvaco TCAD driven power device development and modeling solutions are key to dramatically reducing development time and costs, while accelerating time to market.
Power Devices
Silicon Carbide and Silicon
RF Power Devices
Gallium Nitride
Lean more about developing SiC and Silicon Power Devices in the Victory TCAD SiC and Silicon Development Overview
Lean more about developing GaN Power Devices in the Victory TCAD GaN Development Overview
Power Device Development Overview
TCAD driven development and modeling of power device technologies enables device engineers to make virtual changes in operating conditions, device technology, or in semiconductor technology during development. This exploration builds qualitative and then quantitative understanding of the target power device under development. Iterative simulation then allows engineers to optimize device performance and operating parameters dramatically reducing the time and costs needed to reach volume production.
TCAD Development Flow
Process
Victory Process virtualizes your process flow
Optimize your next generation power device through virtual fabrication
Full 2D / 3D TCAD Process Simulation and Emulation Solution
- Build, debug, calibrate in fast 2D
- Easy transition to realistic 3D for full 3D technology design
- Seamless integration into Device Simulation
Process simulation for SiC, GaN, and Si
- Etch and Deposition
- Implantation
- Dopant Activation
- Oxidation
- Stress
- Open Model Library and Material database
Modeling and SPICE Simulation
Utmost IV provides fast and accurate SPICE model generation
SmartSpice delivers high accuracy simulation results
Utmost IV extracts and validates SPICE parametric models
- TCAD flow integration
- SPICE parameter optimization
- SmartSpice engine delivers high speed and accurate simulation
- Breadth and depth of available compact models
- Hierarchical macromodels of any complexity
- Multiple temperatures, wafers, die, devices
- Mixture of DC, Capacitance, S-parameter and extracted data (Vt, Idsat, ft, etc.)
- Any combination of device model parameters and netlist parameters
SmartSpice Rubberband for transient parameters tuning
- Using time-based data
- Gate charge, Miller plateau tuning
- Reverse recovery time and charge parameters (trr, Qrr)
