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How to Design Wide Band-Gap Power Devices using Silvaco TCAD Solution

TCAD Simulation of Electric Field

Silvaco Simulation Standard: TCAD Simulation of Electric Field Distribution in Gallium Nitride Trench based Power Devices

Learn about the design of wide bandgap (WBG) and ultra-WBG power devices. See how design teams are using Silvaco TCAD 3D simulation for:

  • Design of GaN FinFET and tri-gate power device
  • Fabrication process simulation
  • Self-consistent electrothermal simulation for power performance evaluation
  • Device-circuit mixed-mode simulation for studying the device dynamics in power circuits
  • Mixed-mode simulation for understanding device reliability and ruggedness
Key Process of Vertical GaN

Key Process of Vertical GaN; Trench formation and corner rounding


Dr. Yuhao ZhangDr. Yuhao Zhang
Assistant Professor, Center for Power Electronics Systems, Virginia Tech

Dr. Yuhao Zhang is an assistant professor with the Center for Power Electronics Systems (CPES) at Virginia Tech. Before joining CPES, he worked as a postdoctoral associate at Massachusetts Institute of Technology (MIT) from 2017 to 2018. He received his Ph. D. and S. M., both in electrical engineering from MIT in 2017 and 2013, respectively.

Prior to joining MIT, he received his B. S. in physics from Peking University in 2011 with the highest honor. He received the MIT Microsystems Technology Laboratories Doctoral Dissertation Award in Spring 2017 and the IEEE George Smith Award in 2019. His research interest is at the intersection of power electronics, micro/nano-electronic devices, and advanced semiconductor materials. 


Device and process engineers, and management looking for solutions to design and optimize SiC and other wide banc-gap power devices.

When: February 11, 2020
Where: Online
Time: 10:00am-10:20am-(PST)
Language: English