Simulation Standard

The past several years has seen a fast deployment of wide-bandgap power devices in fast chargers, electric vehicles, data centers and renewable energy processing. The performance of power devices is

It is common to run the process simulation for the part of a larger structure just to reduce the computation time. To account for the influence of parts of the

The utilization of thin material layers is common in modern semiconductor device fabrication. Subsequent etching steps require an accurate modeling of these thin layers. Although level-set based process TCAD simulations

Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device.

The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V

Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will

One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in

The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice

New Features in the 2022 Baseline Release:

• Section 1: Process Simulation – New Features in 2022 Baseline Release
• Section 2: Device Simulation – New Features in 2022 Baseline Release

This work reports on the design of a high efficiency InGaN-based two junction (2J) tandem solar cell via numerical simulation, operating at high temperatures (450o C) and under 200 suns

Self-heating effect may cause over-heated damage and degradation for silicon-on-insulator (SOI) devices, so numerical counting heat generated, and distribution can optimize the radio frequency integrated circuits (RFICs) applications. Both conventional

Victory Mesh support for line statements lets the user customize the volume mesh used by conformal remesh schemes. The volume mesh data inherited from Victory Process can be replaced with