Entries by Gigi Boss
How to Use Victory Quantum Transport Models for Atomistic Device Performance Predictions
May 5, 2022
In this webinar, the latest incoherent scattering models of the quantum transport implementations are presented. They faithfully reproduce–without adjustable parameters–experimental observations of band gap narrowing and Urbach band tails in a sequence of III-V semiconductors and transition metal dichalcogenides.
Learn How to Improve TFT-Based Flat Panel Designs with the Unique SmartSpice 4-Terminal TFT Model
April, 28, 2022 (PDT)
In this webinar, we will describe SmartSpice’s 4-terminal TFT compact model. Unique in the market, we present some of the characteristics of this compact model, and some of the degrees of freedom that it brings to both the modeling and the design teams.
How Can I Remesh a Structure Using a Custom Volume Mesh in Victory Mesh?
Victory Mesh support for line statements lets the user customize the volume mesh used by conformal remesh schemes. The volume mesh data inherited from Victory Process can be replaced with a new volume mesh defined within Victory Mesh, allowing full control over the conformal remesh and generating a mesh suitable for device simulation in Victory Device.
In this hints and tips two case studies are discussed.
In the first, a solid modeling case will show how a FinFET is made using solid modeling commands, and how a volume mesh generated with line statements in Victory Mesh is used to generate a conformal remesh. A comparison of device simulations with a refined Delaunay mesh is also presented.
In the second, a buffered super junction LDMOS is loaded from Victory Process and remeshed using a customized volume grid created with line statements in Victory Mesh.
Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations
March 24, 2022 | 10:00 am – 10:30 am (PDT)
In this Webinar, we will introduce mqSemi and the 3D TCAD models and simulation results while highlighting Silvaco`s powerful Victory Process and Device.
Simulation of AlGaInP Multiple Quantum Well LED for Micro Display
The flat panel display industry has been growing rapidly for recent years in mobile display, car display, AR/VR applications, and large-scale TVs display. The core technology enabling these applications is the light emitting diode (LED), which is a key component to realize the highly visible, power efficient, displays. For decades, many researchers have developed blue and green LEDs using wide band gap GaN-based wurtzite crystalline material, and successfully manufactured LED devices. However, to make a bright white LED and/or an integrated RGB display, red and yellow LED is also needed. To accomplish this, a smaller bandgap material like a cubic AlGaInP material can be used.
How to Optimize and Boost Your Device Modeling and Characterization with Utmost IV
March 10, 2022 | 10:00 am – 10:30 am (PST)
In this webinar we will examine some of the key features and advantages of Utmost IV for device modeling and characterization, and the major design flows where Utmost IV is a key component.
Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation
Platinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching performance. Thermal diffusion is primarily used as the common method to introduce platinum or gold dopants into silicon. There is interest to better understand how the processing conditions for Pt/Au diffusion can affect switching behavior. Control and shaping of the profile is critical to obtain optimum device performance. In this article, Silvaco Victory TCAD tools [4] [5] are used to predict the effect of platinum on a PiN diode’s reverse recovery time (Trr). The simulated platinum profile from process simulation is automatically fed into the device simulator, and the relationship between platinum diffusion processing parameters and Trr is effortlessly studied.
How to Use Device Simulation as a Tool for Understanding GaN HEMTs
February 24, 2022 | 10:00 am – 10:30 am (PST)
This webinar will illustrate through specific published examples of how TCAD device simulation of GaN based devices can be a powerful tool to help explain complex performance limiting device instabilities in both RF and power devices.