Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations
Silicon IGBT and SiC MOSFETs are today`s key power semiconductor switches for many power electronics converters such as those in automotive, renewables and industrial applications. Both device concepts continue to evolve, and development trends are continuously targeting improved overall electrical and reliability performance at lower costs.
In addition to established power device manufacturers, many start-up companies have been founded in recent years providing novel solutions. Many of these solutions are based on 3D design concepts to achieve higher performance levels. The proof of concept of such semiconductor designs at a practical level can be very costly for a new start-up company with limited funds.
Therefore, to enable a faster and more cost-effective track for the initial stages of value creation, 3D TCAD simulations for the proof of concept of such novel structures are required. For our start-up company mqSemi AG, a new S-MOS cell concept was introduced where Silvaco provided the necessary TCAD tools and support to demonstrate the concept functionality for 1200V Silicon IGBTs and SiC MOSFET. We will introduce mqSemi and the 3D TCAD models and simulation results while highlighting Silvaco`s powerful Victory Process and Device.
What You Will Learn
- Characteristics of high voltage MOSFET switches
- How to use 3D concepts to achieve higher performance
- Creating TCAD 3D models
- How to utilize simulation results