In this article, the operation of avalanche photo-diodes in the medium gain, continuous operation mode is investigated. In other words, we are not considering diode operation in transient “Gieger” or “single photon” detection mode, but rather in a region safely below secondary breakdown, where a well-designed avalanche photo diode can exhibit a moderate photo-generated current multiplication factor of an order of magnitude or higher.

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices have also been explored for their radiation hardness which is inherent due to the strong bonding nature of the binary and ternary nitrides. Radiation-induced instabilities including the radiation-induced stress and changes to the material properties leading to the departure of expected results in practical applications. Due to the limited availability of the test structures and facilities required to analyze the reliability of said devices under ionizing radiations, the cost and time of production gets affected. In this regard, to cut down on the cost and time for production, device engineers require accurate and reliable tools that can accurately predict the robustness of their proposed device architectures in foreign environments. Silvaco’s Victory TCAD software is one such tool that can aid the device engineers in this aspect. In this work, we demonstrate the Total Ionizing Dose (TID) Effects on GaN HEMTs using the Radiation Effects Module (REM) available with Silvaco’s Victory TCAD suite.

Conductive Bridge Random Access Memory (CBRAM) is a non-volatile memory device technology that can operate by consuming very low power. Another advantage of the CBRAM devices is its ability to be easily integrated into conventional back-end-of-line CMOS processes [1].