Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
March 28, 2024
During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g., Short Circuit and UIS tests). In this webinar we will show how the impact of a short circuit of a defect localized in the active area has been investigated by means of TCAD simulations performed with Silvaco software.