Entries by Gigi Boss

How Can I Remesh a Structure Using a Custom Volume Mesh in Victory Mesh?

Victory Mesh support for line statements lets the user customize the volume mesh used by conformal remesh schemes. The volume mesh data inherited from Victory Process can be replaced with a new volume mesh defined within Victory Mesh, allowing full control over the conformal remesh and generating a mesh suitable for device simulation in Victory Device.
In this hints and tips two case studies are discussed.
In the first, a solid modeling case will show how a FinFET is made using solid modeling commands, and how a volume mesh generated with line statements in Victory Mesh is used to generate a conformal remesh. A comparison of device simulations with a refined Delaunay mesh is also presented.
In the second, a buffered super junction LDMOS is loaded from Victory Process and remeshed using a customized volume grid created with line statements in Victory Mesh.

Simulation of AlGaInP Multiple Quantum Well LED for Micro Display

The flat panel display industry has been growing rapidly for recent years in mobile display, car display, AR/VR applications, and large-scale TVs display. The core technology enabling these applications is the light emitting diode (LED), which is a key component to realize the highly visible, power efficient, displays. For decades, many researchers have developed blue and green LEDs using wide band gap GaN-based wurtzite crystalline material, and successfully manufactured LED devices. However, to make a bright white LED and/or an integrated RGB display, red and yellow LED is also needed. To accomplish this, a smaller bandgap material like a cubic AlGaInP material can be used.

Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation

Platinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching performance. Thermal diffusion is primarily used as the common method to introduce platinum or gold dopants into silicon. There is interest to better understand how the processing conditions for Pt/Au diffusion can affect switching behavior. Control and shaping of the profile is critical to obtain optimum device performance. In this article, Silvaco Victory TCAD tools [4] [5] are used to predict the effect of platinum on a PiN diode’s reverse recovery time (Trr). The simulated platinum profile from process simulation is automatically fed into the device simulator, and the relationship between platinum diffusion processing parameters and Trr is effortlessly studied.