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TCAD Simulations of RF-SOI Switches with Trap-Rich Substrate
The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA, and LTE systems exhibit higher integration levels and have become the fastest growing mobile phone submarket. CMOS-SOI processes, especially with thin silicon, have the potential to rival the FoM that was traditionally feasible only with GaAs technologies.
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