Silvaco technologists and research partners will be participating in the SISPAD 2020 conference for simulation of semiconductor processes and devices. There will be four talks divided across three sessions. All content will be presented online. Session 3 content is available from Sept. 23 to Sept. 28. Sessions 10 and 11 content is available from Sept. 28 to Oct. 3.
Session 3: Computational Methodology
#3-2: “Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD” by A. Scharinger, P. Manstetten, J. Weinbub, from TU Wien Austria and by A. Hossinger from Silvaco Europe U.K.
Session 10: Non-Volatile Memory II ReRAM and MRAM
#10-4: “Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling” by S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, V. Sverdlov from TU Wien, Austria and by W. Goes from Silvaco Europe U.K.
#10-5: “Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells” by J. Ender1, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr from TU Wien, Austria and by V. Sverdlov from Silvaco Europe U.K.
Session 11: High Speed Switching Devices and Noise
#11-9: “Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below” by P. Blaise, U. Kapoor, M. Townsend, E. Guichard from Silvaco, USA and by J. Charles, D. A. Lemus, T. Kubis from Purdue University.