This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and Density-Gradient model

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior to epitaxy may contain regions of crystalline silicon, polysilicon or insulators, usually silicon dioxide. In the case of LOCOS isolation, the surface is also non-planar. In such epitaxial cases, epitaxy can be divided into two general types:-

HiSIM-1.2 parameter extraction methodology was discussed in detail in a previous issue of Silvaco Simulation Standard [1]. This article is meant to provide the precise UTMOST-III local optimization strategies to UTMOST-III users who are interested in HiSIM-1.2 parameter extraction. The developed strategies were applied to the actual 90 nm technology devices [2]. The HiSIM-1.2 proved the capability to give the scalable model down to 100 nm from 10 um channel length with no parameter binning.

Customers are starting to use 64bit machines with large hard drives and Gigs of RAM and tend to forget the limitations imposed by a 32bit operating system. If you have more than 2Gigs of RAM in a system the extra is not used by the 32bit compiled program as it is not possible to address a contigeous memory space bigger than this when you have 1 parity bit and 31 data bits (2^31). If you are however using our 64bit compiled version of SmartSpice then you can use as much memory (RAM) as you care to put into the system (2^63 is a huge number compared to the 32 bit case).